Abstract
The effect of external anisotropic strain on the infrared and visible luminescence spectra of SiGe/Si quantum well heterostructures at liquid helium temperatures is investigated for the first time. It is shown that, at a temperature of T = 5 K, the stretching of the SiGe layer along the [100] direction leads to an increase in the relative intensity of the visible luminescence by a factor of 7/3 ≃ 2.3. This effect is absent when the sample is stretched along the [110] direction. These observations are explained by considering “bright” and “dark” biexciton states involved in multiparticle recombination. At a temperature of 2 K, the relative intensity of the visible luminescence increases upon stretching by a factor of 3.4–3.9, which may indicate either the splitting of the ground states of biexcitons with different electron configurations or the deviation of their distribution function from the Boltzmann law.
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Original Russian Text © S.N. Nikolaev, V.S. Krivobok, V.S. Bagaev, E.E. Onishchenko, A.V. Novikov, M.V. Shaleev, 2018, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2018, Vol. 107, No. 6, pp. 371–377.
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Nikolaev, S.N., Krivobok, V.S., Bagaev, V.S. et al. Visible Emission from a Dense Biexciton Gas in SiGe/Si Quantum Wells under External Anisotropic Strain. Jetp Lett. 107, 358–363 (2018). https://doi.org/10.1134/S0021364018060097
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DOI: https://doi.org/10.1134/S0021364018060097