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Investigation of Silicon Diodes in the Mode of Switching by an Impact-Ionization Wave

  • Electronics and Radio Engineering
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Abstract

The results of investigations of silicon diodes in the mode of switching by nanosecond pulses, which initiate an impact-ionization wave, are presented. It is shown that the switching process is significantly influenced by dislocations that are formed in the surface layers of diode structures during their manufacture.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    S. V. Korotkov, Yu. V. Aristov, V. B. Voronkov & D. A. Korotkov

Authors
  1. S. V. Korotkov
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  2. Yu. V. Aristov
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  3. V. B. Voronkov
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  4. D. A. Korotkov
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Corresponding author

Correspondence to S. V. Korotkov.

Additional information

Original Russian Text © S.V. Korotkov, Yu.V. Aristov, V.B. Voronkov, D.A. Korotkov, 2018, published in Pribory i Tekhnika Eksperimenta, 2018, No. 4, pp. 36–40.

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Korotkov, S.V., Aristov, Y.V., Voronkov, V.B. et al. Investigation of Silicon Diodes in the Mode of Switching by an Impact-Ionization Wave. Instrum Exp Tech 61, 496–500 (2018). https://doi.org/10.1134/S0020441218030211

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  • DOI: https://doi.org/10.1134/S0020441218030211

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