Abstract
A tribometric device designed for rapid monitoring of the concentrations of atomic and molecular contaminants on the surfaces of semiconductor and dielectric substrates within the range of 10−7–10−10 g/cm2 is described. The method is based on measurements of the static and sliding friction coefficients between the investigated surfaces. The arrangement of interacting substrates forming a point contact and allowing elimination of disturbances in the crystal structure in the slip region at loads in the range of 0–3.7 N and angles between the substrates of 0–15° is shown.
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Original Russian Text © V.A. Kolpakov, N.A. Ivliev, 2014, published in Pribory i Tekhnika Eksperimenta, 2014, No. 5, pp. 129–134.
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Kolpakov, V.A., Ivliev, N.A. Measuring the surface purity of substrates by the tribometry method. Instrum Exp Tech 57, 640–645 (2014). https://doi.org/10.1134/S0020441214040174
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DOI: https://doi.org/10.1134/S0020441214040174