Abstract—
We have demonstrated the feasibility of doping CdCr2Se4 single crystals with Group III elements (Ga, In, and Al) during annealing and identified relationships between annealing conditions, the composition of annealing mixtures, and properties of the crystals. Annealing mixture compositions have been found that ensure the possibility of preparing CdCr2Se4 single crystals with a considerably increased Curie temperature. We have performed multistep annealing of particular samples, which has made it possible to understand the role of each mixture component.
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Funding
Part of this work (synthesis of the spinel phase) was supported by the Russian Federation Ministry of Science and Higher Education through the state research target for the Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences.
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Translated by O. Tsarev
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Vinogradova, G.I., Anzina, L.V., Menshchikova, T.K. et al. Thermal Annealing As a Means of Controlling the Properties of the Magnetic Semiconductor CdCr2Se4. Inorg Mater 55, 1092–1096 (2019). https://doi.org/10.1134/S0020168519110153
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DOI: https://doi.org/10.1134/S0020168519110153