Abstract
Co (Ni) films on ceramic lead zirconate titanate (PbZr0.45Ti0.55O3) ferroelectric substrates and single-crystal GaAs piezoelectric substrates are shown to exhibit a giant magnetoelectric response, which reaches 200 V/A at room temperature and mechanical Q of at least 1000. These findings are interpreted in terms of the formation of stable interfaces in thin-film heterostructures owing to good adhesion of dissimilar materials to substrate surfaces after ion beam sputtering/deposition processing. This will allow one to extend the applicability of the magnetoelectric effect at room temperature to commercially available microelectronic materials and integrate related hybrid structures into single-chip signal generation/processing devices.
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Original Russian Text © A.I. Stognij, N.N. Novitskii, V.A. Ketsko, S.A. Sharko, N.N. Poddubnaya, V.M. Laletin, A.V. Bespalov, O.L. Golikova, M.N. Smirnova, L.Yu. Fetisov, A.O. Titova, 2016, published in Neorganicheskie Materialy, 2016, Vol. 52, No. 10, pp. 1141–1147.
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Stognij, A.I., Novitskii, N.N., Ketsko, V.A. et al. Influence of the state of interfaces on the magnitude of the magnetoelectric effect in Co (Ni) films on PbZr0.45Ti0.55O3 and GaAs substrates. Inorg Mater 52, 1070–1076 (2016). https://doi.org/10.1134/S0020168516100162
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DOI: https://doi.org/10.1134/S0020168516100162