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Gate Driver for SiC Power MOSFETs Using Soft-Switching Technique

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Abstract

In this paper, gate drive IC for SiC power MOSFETs using soft-switching technique gate drive method is designed and implemented. Designed IC is suitable for driving silicon carbide (SiC) power MOSFET. The gate drive IC using soft-switching gate drive method, which is composed of high side and low side soft-switching controller, reduce the overshoot and switching loss of the SiC power MOSFET during the turn-on period effectively. The gate drive IC using soft-switching gate drive method reduces the switching loss by 14% without increasing the overshoot magnitude. To verify the electrical characteristics of the designed IC, simulations and experiments were performed.

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Acknowledgements

This research was supported by Korea Electrotechnology Research Institute (KERI) Primary research program through the National Research Council of Science & Technology (NST) funded by the Ministry of Science and ICT (MSIT) (no. 18-12-N0101-02).

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Authors and Affiliations

  1. Power Semiconductor Research Center, KERI, Changwon, Korea

    Kihyun Kim, Hyoung-Woo Kim & Kyoungho Lee

  2. Department of Electric Engineering, Pusan National University, Busan, Korea

    Kihyun Kim & Jusung Park

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  1. Kihyun Kim
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  2. Hyoung-Woo Kim
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  3. Kyoungho Lee
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  4. Jusung Park
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Correspondence to Jusung Park.

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Kim, K., Kim, HW., Lee, K. et al. Gate Driver for SiC Power MOSFETs Using Soft-Switching Technique. J. Electr. Eng. Technol. 14, 1311–1319 (2019). https://doi.org/10.1007/s42835-019-00117-w

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  • DOI: https://doi.org/10.1007/s42835-019-00117-w

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