Abstract
1-Trit and 2-Trit Ternary comparator circuits using Complementary Metal–Oxide–Semiconductor (CMOS) as well as Carbon Nanotube Field-Effect Transistor (CNTFET) is proposed and investigated for Low Power High-performance applications. The design and simulation are investigated and authenticated using Hailey Simulation Program with Integrated Circuit (HSPICE) with Predictive technology model (PTM) low power 32 nm metal gate/High-K/Strained-Si Model for CMOS and 32 nm Stanford Model for CNTFET. The CNTFET based design is compared with the CMOS design in terms of significant design aspects, specifically delay, Average Power consumption and Power delay product (PDP). A comparison is performed among CMOS and CNTFET based ternary comparator circuits which reveals that CNTFETs can lead to more efficient ternary circuits. In terms of delay and power consumption, the CNTFET based 1-Trit Ternary Comparator performs better than the CMOS based 1-Trit Ternary Comparator as the delay and Average power consumption are reduced by 89.7% and 57.3% in CNTFET type as compared to the CMOS based 1-Trit Ternary Comparator design. Similarly, in the case of the 2-Trit comparator, the CNTFET based design performs better than the CMOS-based design as the delay and Average power consumption are reduced by 88.7% and 42% in the CNTFET type.
Similar content being viewed by others
References
J. Lukasiewicz, O logice trójwartościowej, Ruch Filozoficzny (1920), 170–171
S. Rani, G. Kaur, B.S. Lakha, J. Nanosci. Nanoen. App. 8(2), 20–30 (2018)
C. Vudadha, P.P. Sai, V. Sreehari, & M.B. Srinivas, M. B. Int. Symposium on Comm. and Information Technologies (ISCIT). IEEE. 942–946 (2012).
A. Ray Chowdhury, K. Roy, IEEE Trans Nanotechnol, 4(2): 168–179 (2005)
X.W. Wu, F.P. Prosser, IEE Proc. G-Circuits. Devices Syst. 137(1), 21–27 (1990)
D. Etiemble, M. Isreal, IEEE Tran. Comp. (12): 1222–1233 (1977).
R.H. Baughman, A.A. Zakhidov, W.A. De Heer, Science 297(5582), 787–792 (2002)
International Technology Roadmap for Semiconductors (ITRS). (2015) Emerging Research Device Summary.
A. Singh, M. Khosla, B. Raj, IEEE 4th Global Conference on Consumer Electronics (GCCE). 552–555. IEEE (2015).
A.H. Chowdhury, N. Akhter, A (Al Faisal, Proceedings of the Global Engineering, 2012), pp. 1–9
P. Chuang, D. Li, M. Sachdev, IEEE Trans. Circuits Syst. II: Exp. Br. 59(2), 108–112 (2012)
V. Sridevi, T. Jayanthy, Arabian J. for Sci. Eng. 39(6), 4875–4890 (2014)
A.P. Dhande, and V.T. Ingole, V.T, In Proc. Int. Conf. IEEE-Sci. Electron. Technol. Inf. Telecommunication, 17–21 (2005).
A.P. Dhande, V.T, Ingole, and V.R. Ghiye, V.R, S M Medical Technology Private limited. Chap. 5 (2014).
S. Rani and B. Singh, In Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET). IGI Global, 72–92 (2020)
A. Srivastava, K. Venkatapathy, VLSI DESIGN. 4(1), 75–81 (1996)
H. Samadi, A. Shahhoseini, F. Aghaei-liavali, Microelectron. J. 63, 41–48 (2017)
G. Kanal, Digital Electronics | Electronics, Digital Electronics. chap.5 (2014).
Stanford University CNFET Model. http://nanostanford.edu/models.phpwebsite.
Predictive Technology Model. http://ptm.asu.edu/modelcard/LP/32nm_LP.pm.
S.L. Murotiya, A. Gupta, & S. Vasishth,“Novel design of ternary magnitude comparator using cntfets,” In 2014 Annual IEEE India Conference (INDICON), pp. 1–4 (2014)
C. Vudadha, P.P. Sai, V. Sreehari, & M.B. Srinivas, “CNFET based ternary magnitude comparator,” In 2012 International Symposium on Communications and Information Technologies (ISCIT), IEEE, pp. 942–946. (2012)
S. Bala, M. Khosla, Design and analysis of electrostatic doped tunnel CNTFET for various process parameters variation. Superlattices Microstruct. 124, 160–167 (2018)
E. Shahrom, S.A. Hosseini, A new low power multiplexer based ternary multiplier using CNTFETs. AEU-Int. J. Electron. Commun. 93, 191–207 (2018)
S. Bala, M. Khosla, Design and performance analysis of low-power SRAM based on electrostatically doped tunnel CNTFETs. J. Comput. Electron. 18(3), 856–863 (2019)
F. Razi, M.H. Moaiyeri, R. Rajaei, S. Mohammadi, A variation-aware ternary spin-hall assisted STT-RAM based on hybrid MTJ/GAA-CNTFET logic. IEEE Trans. Nanotechnol. 18, 598–605 (2019)
K. Tamersit, Sub-10 nm junctionless carbon nanotube field-effect transistors with improved performance. AEU-Int. J. Electron. Commun. 124, 153354 (2020)
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Rani, S., Singh, B. & Devi, R. CNTFET Based Ternary 1-Trit & 2-Trit Comparators for Low Power High-Performance Applications. Trans. Electr. Electron. Mater. 22, 734–749 (2021). https://doi.org/10.1007/s42341-021-00292-6
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s42341-021-00292-6