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Atomic Layer Deposition for Electrochemical Energy: from Design to Industrialization

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Abstract

The demand for high-performance devices that are used in electrochemical energy conversion and storage has increased rapidly. Tremendous efforts, such as adopting new materials, modifying existing materials, and producing new structures, have been made in the field in recent years. Atomic layer deposition (ALD), as an effective technique for the deposition of conformal and thickness-controllable thin films, has been widely utilized in producing electrode materials for electrochemical energy devices. Recent strategies have emerged and been developed for ALD to construct nanostructured architectures and three-dimensional (3D) micro/nanostructures. These strategies emphasize the preparation of active materials for devices such as batteries and supercapacitors or as catalysts for hydrogen evolution. Additionally, ALD is considered to have great potential in practical industrial production. In this review, we focus on the recent breakthroughs of ALD for the design of advanced materials and structures in electrochemical energy devices. The function and merits of ALD will be discussed in detail from traditional thin film depositions for the coating and engineering/modification layers to complex 3D micro/nanostructures that are designed for active materials. Furthermore, recent works regarding metal–organic framework films and transition metal dichalcogenide films, which were prepared with the assistance of ALD oxide, will be highlighted, and typical examples will be demonstrated and analysed. Because it is within a rapidly developing field, we believe that ALD will become an industrial deposition method that is important, commercially available, and widely used in electrochemical energy devices.

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Acknowledgements

This work is supported by the Natural Science Foundation of China (No. 51961145108, 61975035, and 51850410502) and the Science and Technology Commission of Shanghai Municipality (No. 21142200200, 19XD1400600, 20501130700, and 19JC1415500).

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  1. Zhe Zhao and Gaoshan Huang contributed equally to this work.

Authors and Affiliations

  1. Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200438, China

    Zhe Zhao, Gaoshan Huang, Ye Kong, Jizhai Cui, Alexander A. Solovev & Yongfeng Mei

  2. Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai, 200438, China

    Zhe Zhao & Yongfeng Mei

  3. Institute of Advanced Electrochemical Energy & School of Materials Science and Engineering, Xi′an University of Technology, Shaanxi, Xi′an 710048, China

    Xifei Li

  4. International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai, 200438, China

    Yongfeng Mei

  5. Yiwu Research Institute of Fudan University, Yiwu 322000, Zhejiang, China

    Yongfeng Mei

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  1. Zhe Zhao
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Zhao, Z., Huang, G., Kong, Y. et al. Atomic Layer Deposition for Electrochemical Energy: from Design to Industrialization. Electrochem. Energy Rev. 5 (Suppl 1), 31 (2022). https://doi.org/10.1007/s41918-022-00146-6

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