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Steady-State and Transient Raman Gain Coefficients of Semiconductor Magneto-plasmas (Calculated for n-InSb-CO2 Laser System)

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Abstract

Assuming that the origin of stimulated Raman scattering (SRS) lies in third-order effective (Raman) susceptibility arising due to nonlinear induced polarization, we obtained expressions for steady-state and transient Raman gain coefficients of weakly polar semiconductors magneto-plasmas under various geometrical configurations. The threshold pump intensity and optimum pulse duration for the onset of transient SRS have been estimated. For numerical calculations, we consider n-InSb crystal at 77 K temperature as a Raman active medium irradiated by a pulsed CO2 laser. The dependence of Raman gain coefficients on doping concentration, external magnetostatic field and its inclination, scattering angle and pump pulse duration have been explored in detail with aim to determine suitable values of these controllable parameters to enhance Raman gain coefficients at lower threshold intensities, and to search the feasibility of efficient semiconductor nonlinear devices based on Raman nonlinearities. Most expectedly, the technological potentiality of weakly polar semiconductor magneto-plasmas as hosts for compression of scattered pulses and fabrication of efficient nonlinear devices such as frequency converters, Raman amplifiers and oscillators based on Raman nonlinearities have been established.

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Data sharing not applicable to this article as no data sets were generated or analysed during the current study.

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Acknowledgements

We are very thankful to Prof. Nawal Kishore, Department of Physics, Central University of Haryana, Jat Pali, Mahendergarh (Haryana) and Mrs. Neelam Sheoran, Principal, Government College Matanhail, Jhajjar (Haryana) for many useful suggestions to carry out the present research work.

Funding

No funding was received to carry out this research work.

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Authors and Affiliations

  1. Department of Physics, Lords University, Chikani, Alwar, Rajasthan, 301028, India

    Gopal & B. S. Sharma

  2. Department of Physics, J.V.M.G.R.R. (P.G.) College, Charkhi Dadri, Haryana, 127306, India

    Jaivir Singh

  3. Department of Physics, Government College, Matanhail, Haryana, 124106, India

    Manjeet Singh

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  1. Gopal
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  2. B. S. Sharma
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  3. Jaivir Singh
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Contributions

JS developed the theoretical formulation. MS performed the numerical analysis. Gopal and BSS revised the manuscript and respond to Reviewer’s comments. All the authors contributed equally to the preparation of the manuscript.

Corresponding author

Correspondence to Manjeet Singh.

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The authors declare that: the manuscript has not been submitted to more than one journal for simultaneous consideration. The submitted work is original and has not been published elsewhere in any form or language. A single study has not been split up into several parts to increase the quantity of submissions and submitted to various journals or to one journal over time. The results have been clearly, honestly, and without fabrication, falsification or inappropriate data manipulation. Authors adhere to discipline-specific rules for acquiring, selecting and processing data. No data, or theories by others have been presented. Proper acknowledgements to the other works have been given.

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Gopal, Sharma, B.S., Singh, J. et al. Steady-State and Transient Raman Gain Coefficients of Semiconductor Magneto-plasmas (Calculated for n-InSb-CO2 Laser System). Iran J Sci Technol Trans Sci 46, 697–708 (2022). https://doi.org/10.1007/s40995-021-01237-7

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  • DOI: https://doi.org/10.1007/s40995-021-01237-7

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