Abstract
This paper reported the synthesis of Ho-doped SBN (SrBi2−x Ho x Nb2O9: x = 0 and 0.4) by a co-precipitation method and investigated the synthesized material with X-ray diffraction analyses, infrared spectroscopy, and electrical measurements. The results show that the Ho-doped SBN has low loss values at higher frequencies and the flattening of dielectric constant which are very desirable in nonvolatile ferroelectric random access memory applications.
摘要
本文报道了一种共沉淀法制备Ho掺杂SBN (SrBi2−x Ho x Nb2O9: x = 0和0.4), 并利用X射线衍射、红外光谱和电学测试对其进行表征. 结 果表明, Ho掺杂SBN在较高频下具有低损耗和稳定的介电常数. 因此这种材料非常适用于非易失FeRAM存储器的应用.
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Mohamed Afqir is a PhD candidate at the University of Littoral Côte d’Opale, Calais (North of France) and Cadi Ayyad University, Marrakech (Morocco). His research focuses on functional ceramics.
Didier Fasquelle is an associate professor at the University of Littoral Côte d’Opale, Calais (North of France). His research lab is the Unit of Dynamic and Structure of Molecular Materials.
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Afqir, M., Tachafine, A., Fasquelle, D. et al. Synthesis, structural and dielectric properties of Ho-doped SrBi2Nb2O9 prepared by Co-precipitation method. Sci. China Mater. 59, 921–926 (2016). https://doi.org/10.1007/s40843-016-5113-2
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DOI: https://doi.org/10.1007/s40843-016-5113-2