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Studies on growth of N-polar InN films by pulsed metal-organic vapor phase epitaxy

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Abstract

We reported the growth of N-polar InN films on N-polar GaN/sapphire substrates by pulsed metal-organic vapor phase epitaxy. The crystalline quality, surface morphology, optical and electrical properties of N-polar InN films were investigated in details by varying the breaking time and trimethylindium(TMIn) duration of pulse cycle. It has been found that when the breaking time and the TMIn duration in each cycle remain at 30 and 60 s, respectively, the N-polar InN film obtained exhibits a better crystalline quality and greater optical properties. Meanwhile, the surface morphology and electrical properties of the N-polar InN films also greatly depend on the given growth conditions.

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Authors and Affiliations

  1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, P. R. China

    Baijun Zhao, Xu Han, Fan Yang, Xin Dong & Yuantao Zhang

  2. Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China

    Baijun Zhao

Authors
  1. Baijun Zhao
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  2. Xu Han
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  3. Fan Yang
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  4. Xin Dong
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  5. Yuantao Zhang
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Corresponding authors

Correspondence to Xin Dong or Yuantao Zhang.

Additional information

Supported by the the National Basic Research Program of China(No.2011CB302005), the National Natural Science Foundation of China(Nos.61106003, 61274023, 61376046 and 61223005), the Science and Technology Developing Project of Jilin Province, China(Nos.20130204032GX and 20150519004JH) and the Program for New Century Excellent Talents in Universities of China(No.NCET-13-0254).

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Zhao, B., Han, X., Yang, F. et al. Studies on growth of N-polar InN films by pulsed metal-organic vapor phase epitaxy. Chem. Res. Chin. Univ. 32, 669–673 (2016). https://doi.org/10.1007/s40242-016-5506-y

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  • DOI: https://doi.org/10.1007/s40242-016-5506-y

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