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Kagome Magnets: The Emerging Materials for Spintronic Memories

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Abstract

Recent developments in the field of topological quantum materials have stimulated the search for materials that could serve as the building blocks for next-generation memory applications. Due to their intriguing topological properties, such as flat bands, Dirac nodes, and Weyl points, kagome magnets are anticipated to be the leading materials for this application. In this mini review, we discuss some of the recent advancements in binary kagome magnets, both ferromagnetic and anti-ferromagnetic, for use as emerging memory devices. First, we discuss ferromagnetic kagome magnets, specifically Fe\(_3\)Sn\(_2\), and then we discuss non-collinear antiferromagnetic kagome magnets, Mn\(_3\)Sn and Mn\(_3\)Ir. Finally, we discuss collinear antiferromagnetic kagome magnet, FeSn. In each of the aforementioned sections, we begin with a discussion of their topological, structural, and magnetic properties, followed by application-specific studies such as spin-orbit torques (SOT). In the final section, we discuss the current state of kagome magnets for efficient, faster, denser, and reliable memory technologies with focus on the SOT switching and observation/manipulation of skyrmions.

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Acknowledgements

N.C. acknowledges the financial support received from I-Hub Quantum Technology Foundation for Chanakya post-doctoral fellowship (order no.:I-HUB/PDF/2021-22/005). The partial support from the Ministry of Human Resource Development under the IMPRINT program (Grant no: 7519 and 7058), the Department of Electronics and Information Technology (DeitY), Science & Engineering research board (SERB File no. CRG/2022/002821), Joint Advanced Technology Centre at IIT Delhi and the Department of Science and Technology under the Nanomission program (grant no: \(SR/NM/NT-1041/2016(G)\)) are gratefully acknowledged. K.I.A.K. acknowledges support from the University Grants Commission (UGC), India. H.B. and R.A. gratefully acknowledge the financial support from the Council of Scientific and Industrial Research (CSIR), Government of India. P.G. and R.S.Y. acknowledge support from the Ministry of Human Resource Development (MHRD), India. All the authors acknowledge the facilities provided by the Department of Physics, IIT Delhi.

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  1. Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, 110016, India

    Niru Chowdhury, Kacho Imtiyaz Ali Khan, Himanshu Bangar, Pankhuri Gupta, Ram Singh Yadav, Rekha Agarwal & Pranaba Kishor Muduli

  2. Department of Physics, University of Gothenburg, 412 96, Gothenburg, Sweden

    Akash Kumar

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Chowdhury, N., Khan, K.I.A., Bangar, H. et al. Kagome Magnets: The Emerging Materials for Spintronic Memories. Proc. Natl. Acad. Sci., India, Sect. A Phys. Sci. 93, 477–495 (2023). https://doi.org/10.1007/s40010-023-00823-1

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