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Evaluation of Sb2O3 influences on radiation shielding properties of Sb2O3–B2O3–Bi2O3–TeO2 glass system using Phy-X/PSD and SRIM software

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Abstract

In this research, gamma-ray, fast neutron, and H1/He+2 ion shielding characteristics of xSb2O3—(35 − x)B2O3–60Bi2O3–5TeO2 (\(x=10, 20, \mathrm{ and}\, 30\) in mol%) glass system were analyzed over 15 keV to 15 MeV by using Phy-X/PSD and SRIM software. The shielding properties of the aforementioned glasses were compared with those of two different bismuth–borate–tellurite glasses for the purpose of evaluation. Results indicate that the addition of Sb2O3 generally improves the overall shielding properties of the glass system enhancing the mass attenuation coefficient, linear attenuation coefficient, half-value layer, tenth-value layer, effective atomic number, etc. The obtained values of attenuation coefficients calculated by using Phy-X/PSD and XCOM(NIST) software were compared and a good agreement between them was confirmed at all selected energies. The maximum values of linear attenuation coefficients obtained at the lowest photon energy of 15 keV for samples S1, S2, S3, S4, and S5 were 590.123, 601.463, 610.986, 477.481, and 422.572 cm−1, respectively. The calculated mass stopping power and projected range values obtained through the utilization of SRIM software demonstrated superior shielding capability for H1/He+2 ions in the sample with the highest Sb2O3 content. A similar trend was observed in the fast neutron removal cross section values. Our findings strongly suggest that all of the chosen samples, especially S3 (for \(x = 30\)), have superior radiation shielding characteristics, and thus can be used as an alternative material to replace the conventional material: lead for radiation shielding.

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Correspondence to T R Lamichhane.

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Editorial responsibility: Chenxi Li.

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Kattel, R., Subedi, B. & Lamichhane, T.R. Evaluation of Sb2O3 influences on radiation shielding properties of Sb2O3–B2O3–Bi2O3–TeO2 glass system using Phy-X/PSD and SRIM software. Int. J. Environ. Sci. Technol. 21, 3317–3328 (2024). https://doi.org/10.1007/s13762-023-05192-1

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  • DOI: https://doi.org/10.1007/s13762-023-05192-1

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