Abstract
In this paper, the microwave characteristics of typical photosensitive material InP under different light irradiation are studied. The measurement sensor is a reflection-type hemispherical quasi-optical resonator with an operating frequency range from 20 to 40 GHz, an operating mode of TEM00q, and a quality factor of 18,000 or more. For the short-time irradiation experiment, the variation of InP microwave characteristics with the irradiation power of 20 mW, 60 mW, 100 mW, and 200 mW, is studied by frequency-domain and time-domain scanning methods, respectively. The measurement results indicate that the microwave characteristics of InP change significantly even under weak light irradiation. Taking 100 mW and 200 mW irradiation power as examples, the long-time irradiation experiment performed on InP lasting 1.5 min is carried out. The measurement result curves clearly show the influence of the thermal and non-thermal effects on the InP microwave characteristics at the instant of the monochrome light source opening and closing and during irradiation. Furthermore, the temperature distribution of InP during 200 mW irradiation is real-time imaged by a thermal infrared imager to verify the existence of thermal effect during irradiation. The measurement results are in good agreement with the theoretical analysis.
Graphic Abstract
The microwave properties of InP under short-time and long-time irradiation are analyzed by frequency-domain and time-domain scanning methods, especially the effects of thermal and non-thermal on microwave properties during long-term irradiation.
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References
Yao, J.: Microwave photonics. J. Lightwave Technol. 27, 314 (2009)
Benitez, J., Mora, J.: Low-coherence interferometry using microwave photonics for multilayered samples. J. Lightwave Technol. 36, 1 (2018)
Zhan, S., Jun, W., Zhiyao, J., Difei, S., Ming, L., Ninghua, Z., Wei, L.: Tunable single notch microwave photonic filter based on delay lines. Opt. Commun. 448, 15 (2018)
Lin, T., Zhao, S., Zhu, Z., Li, X., Zheng, Q., Qu, K., Hu, D.: Microwave photonics reconfigurable mixer based on polarization modulator. Opt. Quant. Electron. 50, 1 (2017)
Thorette, A., Romanelli, M., Vallet, M.: Synchronization of two DFB lasers using frequency-shifted feedback for microwave photonics. IEEE J. Quantum. Elect. 55, 1 (2019)
Sales, S., Xue, W., Mork, J., Gasulla, I.: Slow and fast light effects and their applications to microwave photonics using semiconductor optical amplifiers. IEEE T. Microw. Theory. 58, 3022 (2010)
Fandino, J.S., Munoz, P.: Photonics-based microwave frequency measurement using a double-sideband suppressed-carrier modulation and an InP integrated ring-assisted Mach-Zehnder interferometer filter. Opt. Lett. 38, 4316 (2013)
Baili, G., Alouini, M., Dolfi, D., Bretenaker, F., Sagnes, I., Garnache, A.: Shot-noise-limited operation of a monomode high-cavity-finesse semiconductor laser for microwave photonics applications. Opt. Lett. 32, 650 (2007)
Kamitsuna, H., Shibata, T., Kurishima, K., Ida, M.: Direct optical injection locking of InP/InGaAs HPT oscillator ICs for microwave photonics and 40-Gbit/s-class optoelectronic clock recovery. IEEE T. Microw. Theory. 50, 3002 (2002)
Chang, M.P., Wang, N., Wu, B., Prucnal, P.R.: A simultaneous variable optical weight and delay in a semiconductor optical amplifier for microwave photonics. J. Lightwave. Technol. 33, 2120 (2015)
Hossain, M., Nosaeva, K., Janke, B., Weimann, N., Krozer, V., Heinrich, W.: A G-band high power frequency doubler in transferred-substrate InP HBT technology. IEEE Microw. Wirel. Co. 26, 49 (2016)
Smith, P.M.: Status of InP HEMT technology for microwave receiver applications. IEEE Trans. Microw. Theory. 44, 129 (1996)
Radisic, V., Scott, D.W., Cavus, A., Monier, C.: 220-GHz high-efficiency InP HBT power amplifiers. IEEE Trans. Microw. Theory. 62, 3001 (2014)
Mun, S.C.L.T., Tan, C.H., Dimler, S.J., Tan, L.J.J., Ng, J.S., Goh, Y.L., David, J.P.R.: A theoretical comparison of the breakdown behavior of In0.52Al0.48As and InP near-infrared single-photon avalanche photodiodes. IEEE J. Quantum. Elect. 45, 566 (2009)
Tosi, A., Calandri, N., Sanzaro, M., Acerbi, F.: Low-noise, low-jitter, high detection efficiency InGaAs/InP single-photon avalanche diode. IEEE J. Sel. Top. Quant. 20, 192 (2014)
Bryantseva, T., Lybchenko, D., Lybchenko, V., Markov, I., Markov, R.: Mass transfer in GaAs surface layers under the action of low-intensity electromagnetic waves. Semiconductors. 48, 184 (2014)
Ermolovich, I., Milenin, G., Milenin, V., Konakova, R., Redko, R.: Modification of the defect structure in binary semiconductors under the action of microwave radiation. Tech. Phys. 52, 1173 (2007)
Redko, R.A., Budzulyak, S.I., Vakhnyak, N.D., Demchina, L.A., Korbutyak, D.V., Konakova, R.V., Lotsko, A.P., Okhrimenko, O.B., Berezovskaya, N.I., Bykov, Yu.V., Egorov, S.V., Eremeev, A.G.: Effect of microwave (24 GHz) radiation treatment on impurity photoluminescence of CdTe:Cl single crystals. J. Lumin. 178, 68 (2016)
Zayats, N., Konakova, R., Milenin, V., Milenin, G., Redko, R., Redko, S.: Microwave-radiation-induced structural transformations in homo- and heterogeneous GaAs-based systems. Tech. Phys. 60, 432 (2015)
Hatke, A.T., Zudov, M.A., Pfeiffer, L.N., West, K.W.: Temperature dependence of microwave photoresistance in 2D electron systems. Phys. Rev. Lett. 102, 066804 (2009)
Belyaev, A.E., Sachenko, A.V., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Y.Y., Matveeva, L.A., Milenin, V.V., Novitskii, S.V., Sheremet, V.N.: Effect of microwave irradiation on the resistance of Au-TiBx-Ge-Au-n-n+-n++-GaAs(InP) ohmic contacts. Semiconductors. 46, 541 (2012)
Antonov, V., Ivanov, S., Tsarev, V., Chupis, V.: Ultrafast photodetectors based on the interaction of microwave radiation and a photoexcited plasma in semiconductors. Tech. Phys. 43, 1358 (1998)
Drexler, C., BelKov, V.V., Ashkinadze, B., Olbrich, P., Zoth, C., Lechner, V., Terentev, Y.V., Yakovlev, D.R., Karczewski, G., Wojtowicz, T., Schuh, D., Wegscheider, W., Ganichev, S.D.: Spin polarized electric currents in semiconductor heterostructures induced by microwave radiation. Appl. Phys. Lett. 97, 066804 (2010)
Chan, C.H., Ho, C.H., Chen, M.K., Lin, Y.S., Huang, Y.S., Hsu, W.C.: Optical characterization of InAlAs/InGaAs metamorphic high-electron mobility transistor structures with tensile and compressive strain. Thin Solid Films 529, 217 (2013)
Hacker, J.B., Lee, Y.M., Park, H.J., Rieh, J.S., Kim, M.: A 325 GHz InP HBT differential-mode amplifier. IEEE Microw. Wirel. Co. 21, 264 (2011)
Kim, S., Lee, C.U., Song, M., Kwak, M.H.: Design and characterization for travelling wave electrodes of high-speed Mach-Zehnder electro-optic modulator on an n-doped InP substrate. Microw. Opt. Techn. Let. 60, 1558 (2018)
Shu, G., Luo, Y., Zhang, Q., Su, J., Wang, L., Xu, Y., Wang, S.: Millimeter wave measurement of the low-loss dielectric in vacuum electronic devices with reflection-type hemispherical open resonator. J. Infrared. Millim. Terahertz 36, 556 (2015)
Ramo, S., Whinnery, J.R., Duzer, T.V.: Fields and Waves in Communication Elecrtronics, 3rd edn. Wiley, New York (1994)
Meng, B., Booske, J., Cooper, R.: A system to measure complex permittivity of low loss ceramics at microwzive frequencies and over large temperature ranges. J. Rev. Sci. Instrum. 66, 1068 (1995)
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This work was supported by the National Natural Science Foundation of China under Grant No. 61671123 and No. 61001027 and National Key R&D Program of China under Grant No. 2018YFF01013603.
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Li, Y., Li, E., Yu, C. et al. Microwave Characteristics Analysis of Typical Photosensitive Material InP Under Weak Light Irradiation Based on Quasi-Optical Resonator. Electron. Mater. Lett. 16, 131–139 (2020). https://doi.org/10.1007/s13391-019-00196-x
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DOI: https://doi.org/10.1007/s13391-019-00196-x