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Electrical Properties of a ZTO Thin-Film Transistor Prepared with Near-Field Electrohydrodynamic Jet Spraying

  • Original Article - Electronics, Magnetics and Photonics
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Abstract

Zinc-tin oxide (ZTO) thin-films were prepared by applying a near-field around the tip of electro-hydrodynamic (EHD) jet spray system and characterized. Oval shaped multi droplets were obtained by the near-field assisted EHD (NF-EHD) jet spray. The optimized condition of an approximately 2.5 to 3 volts difference between the tip and near-field enabled the oxide semiconductor solution to spray properly. The electrical properties of ZTO thin-film transistor showed a mobility of 2.96 cm2/Vs, an on-to-off ratio of 107, a threshold voltage of 4.40 V, a subthreshold slope of 0.54 V/dec, and. Improved stability under bias stress and relaxation after stress were observed after applying a near-field to the EHD jet spray system.

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Acknowledgements

Author really appreciate Y.-J. Kwack’s experimental support. This work was supported by the Basic Science Research Program through the National Research Foundation (NRF) funded by the Ministry of Education, Science and Technology (NRF-2015R1A2A2A01003765).

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Authors and Affiliations

  1. Department of Display Engineering, Hoseo University, Asan-Si, Chungnam, 31499, Korea

    Woon-Seop Choi

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  1. Woon-Seop Choi
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Correspondence to Woon-Seop Choi.

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Choi, WS. Electrical Properties of a ZTO Thin-Film Transistor Prepared with Near-Field Electrohydrodynamic Jet Spraying. Electron. Mater. Lett. 15, 171–178 (2019). https://doi.org/10.1007/s13391-018-00105-8

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  • DOI: https://doi.org/10.1007/s13391-018-00105-8

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