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Voltage-dependent capacitance and conductance in Se films

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Abstract

This study explores the electrical properties of selenium thin films synthesized using the thermal evaporation method. The electrical properties of capacitance and conductance were investigated for DC bias voltages swept from −20 V to +20 V. The influence of temperature on the electrical properties was characterized by measurements performed at temperatures ranging from room temperature to 400 K. The conductance of the film above 370 K was observed to change with applied voltage in a manner similar to that of a p–n junction. However, in contrast to the p–n junction, the threshold voltage, determined from conductance–voltage curves, was increased with temperature. The results are explained by considering barrier potentials established at the boundaries between crystalline islands.

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Acknowledgment

The authors are grateful to the UAE University for the research funding through the United Arab Emirates University Program for Advanced Research (UPAR project no. 31S313), and the Summer Undergraduate Research Experience (SURE +) program.

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Authors and Affiliations

  1. Department of Physics, UAE University, P.O. Box 15551, Al Ain, United Arab Emirates

    Sunil Thomas, Latifa Aljabri, Mallak Hamaideh, Hessa Alshamsi, Saleh T. Mahmoud & Naser Qamhieh

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  1. Sunil Thomas
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  2. Latifa Aljabri
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  3. Mallak Hamaideh
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  6. Naser Qamhieh
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Correspondence to Sunil Thomas.

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Thomas, S., Aljabri, L., Hamaideh, M. et al. Voltage-dependent capacitance and conductance in Se films. Indian J Phys 95, 2697–2701 (2021). https://doi.org/10.1007/s12648-020-01940-y

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