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Junction characteristics of ITO/PANI-ZnS/Ag and ITO/PANI-CdS/Ag Schottky diodes: a comparative study

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Abstract

Schottky junctions are constructed by depositing PANI-ZnS and PANI-CdS nanocomposite thin films on ITO electrodes. Current–voltage (I–V) measurements of these systems are performed as a function of temperature in the range of 313–363 K. These junctions show Schottky diode nature. Various parameters, such as saturation current (I 0), ideality factor (n), barrier height (∅ 0) and series resistance (R S), are calculated from diode characteristics relations. These parameters show strong temperature dependence. The values of I 0 and ∅ increase with increasing temperature, whereas the values of n and R S show decreasing trend. A Richardson plot of the data shows nonlinear behaviour with Richardson constant ~76 and 45 A cm−2 K−2 for PANI-ZnS and PANI-CdS nanocomposite thin films, respectively.

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Acknowledgments

Authors acknowledge Department of Science and Technology, Govt. of India, for providing financial support through Project No. DST/TSD/PT/2009/96.

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Authors and Affiliations

  1. Department of Physics, Gauhati University, Guwahati, 781014, Assam, India

    S. K. Dey, S. Baglari & D. Sarkar

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  1. S. K. Dey
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  2. S. Baglari
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  3. D. Sarkar
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Correspondence to D. Sarkar.

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Dey, S.K., Baglari, S. & Sarkar, D. Junction characteristics of ITO/PANI-ZnS/Ag and ITO/PANI-CdS/Ag Schottky diodes: a comparative study. Indian J Phys 90, 29–34 (2016). https://doi.org/10.1007/s12648-015-0723-7

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  • DOI: https://doi.org/10.1007/s12648-015-0723-7

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