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A Comprehensive Review of Recent Progress, Prospect and Challenges of Silicon Carbide and its Applications

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Abstract

Energy efficient electronic design has become imperative due to the depletion of non-renewable energy resources, worldwide increase in power consumption, and significant loss in energy conversion. Silicon Carbide (SiC) is one of the material exhibiting excellent features with its physio and thermo-electric properties to operate in a harsh environments like high temperature, corrosive, and radiation ambiance with low energy consumption. Further properties viz. similar thermal oxidation state like silicon, good chemical stability in reactive environments enlarge the application spectrum of silicon carbide ranging from simple abrasive material to substrate for GaN power amplifiers used in 5G massive multiple input multiple output (mMIMO) applications and luminescent down shifting (LDS) layer in photovoltaic (PV) cells. It would be much interesting to acquaint the properties, progress, and applications of such a noble material. In this review, the material properties of SiC are discussed in detail with progress in the device fabrication. Finally, the major application domains of the SiC are discussed.

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  1. School of Electronics Engineering, Vellore Institute of Technology, Chennai, 600127, India

    Papanasam E, Prashanth Kumar B, Chanthini B, E. Manikandan & Lucky Agarwal

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First author has done the literature survey and prepared the manuscript.

Second author has significantly contributed in the introduction section of the manuscript.

Third author has contributed towards the gas sensing application.

Fourth author has prepared the THz application.

Corresponding author has given valuable suggestions and done the overall correction of the manuscript.

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Correspondence to Lucky Agarwal.

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E, P., B, P.K., B, C. et al. A Comprehensive Review of Recent Progress, Prospect and Challenges of Silicon Carbide and its Applications. Silicon 14, 12887–12900 (2022). https://doi.org/10.1007/s12633-022-01998-9

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