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Development of SiC Devices for Microwave and RF Power Amplifiers

  • Chapter
Silicon Carbide

Part of the book series: Advanced Texts in Physics ((ADTP))

Abstract

RF and microwave power is a specific world in the universe of electronics. For a given power level, the frequency spectrum is divided in two territories: the digital lowland and the analog highland. On the low frequency side, digital electronics is installed, seemingly for ever. The primary power signal is made of short pulses with variable duration and/or amplitude. Passive filters reject the higher parasitic harmonics. In contrast, the high frequency side still belongs to analog electronics, a world of high complexity, a world in which electronics is still to some extent an art, and not yet a science.

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Author information

Authors and Affiliations

  1. Thales Research and Technology, Domaine de Corbeville, 91404, Orsay Cedex, France

    E. Morvan, A. Kerlain, C. Dua & C. Brylinski

Authors
  1. E. Morvan
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  2. A. Kerlain
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  3. C. Dua
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  4. C. Brylinski
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Editor information

Editors and Affiliations

  1. Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA, 15260, USA

    W. J. Choyke

  2. Department of Electronic Science and Engineering Yoshidahonmachi, Kyoto University, Sakyo, Kyoto, 606-8501, Japan

    H. Matsunami

  3. Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7/A3, 91058, Erlangen, Germany

    G. Pensl

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© 2004 Springer-Verlag Berlin Heidelberg

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Morvan, E., Kerlain, A., Dua, C., Brylinski, C. (2004). Development of SiC Devices for Microwave and RF Power Amplifiers. In: Choyke, W.J., Matsunami, H., Pensl, G. (eds) Silicon Carbide. Advanced Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-18870-1_35

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  • DOI: https://doi.org/10.1007/978-3-642-18870-1_35

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-62333-2

  • Online ISBN: 978-3-642-18870-1

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