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Suppression of Ambipolar Current in Enhanced Gate Based Schottky Barrier CNTFET Using Ant Lion Optimization

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Abstract

In the recent past, due to ballistic transport capability, carbon nanotube field-effect transistors (CNTFETs) have emerged as a potential replacement to conventional semiconductor devices. However, the major bottleneck issue of appropriate CNT synthesis is still standing high, and the fabrication of CNTFETs is usually found possible with Ohmic or Schottky type contacts. This paper concentrates on Schottky barrier(SB) CNTFETs in which carriers’ transmission coefficient is modulated at metal-CNT contact. The basic nature of metal contacted CNTFET devices is ambipolar, and it has been widely proved with the use of coupled Schrödinger–Poisson equation. However, it restricts the efficiency of CNTFETs in both active and cutoff regimes. This paper demonstrates the use of double-gate (DG) structure in CNTFETs to suppress ambipolarity in an efficient way. We have explicitly used the ant lion optimization technique to optimize Ion and Ioff current and established that the proposed enhanced-gate overlapping approach improves the performance characteristic of the CNTFETs.

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  1. Department of Electronics & Communication, National Institute of Technology, Hamirpur, India

    Gagnesh Kumar

  2. Department of Electronics & Communication, UIET, Panjab University, Chandigarh, India

    Gagnesh Kumar & Sunil Agrawal

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  1. Gagnesh Kumar
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  2. Sunil Agrawal
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Kumar, G., Agrawal, S. Suppression of Ambipolar Current in Enhanced Gate Based Schottky Barrier CNTFET Using Ant Lion Optimization. Silicon 14, 11531–11537 (2022). https://doi.org/10.1007/s12633-022-01807-3

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