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The Fabrication of High-Anisotropy Silicon Nanowires Based on MACE Method for Photonic Sensor

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Abstract

Future electronics will be made of silicon nanostructures (SiNs). Mechanical, electrical, and optical characteristics, as well as litho resistivity and thermoelectricity, making them remarkable multi-functional materials. SiNs are used in nanoelectronics, nanoresonators, light-emitting diodes, nanosensors, and thermoelectric energy scavengers, to name a few. Mechanical properties of SiNs, which are expected to differ from those of bulk SiNs, are crucial to the performance and dependability of these nanoelectronics. The metal-aided etching procedure was employed to make the SiNs used in this investigation. This SEM picture of as-grown SiNs displays its structure and demonstrates that the Ns have widths of less than 100 nm. The X-ray diffraction pattern of SiNs reveals the Ns' single-crystalline structure. When polarization-resolved reflections were used on these nanowire arrays, the reflection properties of s- and p-polarized laser beams were found to differ significantly. The findings of this study can be used to a wide range of optical devices that utilise SiNWs, including photodetectors and solar cells. Furthermore, it has the potential to be beneficial in medical imaging.

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Acknowledgements

The authors are thankful to Excel Engineering College, Namakkal, India for their cooperation and support during this research work.

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Authors and Affiliations

  1. Department of ECE, Excel Engineering College, Namakkal, India

    A. Mohamedyaseen

  2. Department of EEE, Mahendra Engineering College (Autonomous), Namakkal, India

    P. Suresh Kumar

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  1. A. Mohamedyaseen
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Contributions

A Mohamedyaseen, P Suresh Kumar: Conceptualization; A Mohamedyaseen, P Suresh Kumar: investigation; A Mohamedyaseen, P Suresh Kumar: resources; A Mohamedyaseen, P Suresh Kumar: data curation; A Mohamedyaseen, P Suresh Kumar: writing—original draft preparation; A Mohamedyaseen, P Suresh Kumar: writing—review and editing; A Mohamedyaseen, P Suresh Kumar: visualization; P Suresh Kumar: supervision.

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Correspondence to A. Mohamedyaseen.

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Mohamedyaseen, A., Kumar, P.S. The Fabrication of High-Anisotropy Silicon Nanowires Based on MACE Method for Photonic Sensor. Silicon 14, 11417–11427 (2022). https://doi.org/10.1007/s12633-022-01751-2

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  • DOI: https://doi.org/10.1007/s12633-022-01751-2

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