Abstract
Dielectric Pocket Packed Double-Gate-All-Around (\({\varvec{D}}{\varvec{P}}{\varvec{P}}-{\varvec{D}}{\varvec{G}}{\varvec{A}}{\varvec{A}}\)) MOSFETs are one of the preferred choices for ULSI applications because of significantly low off-current, reduced power dissipation, and high immunity to short channel effect. However, \({\varvec{D}}{\varvec{P}}{\varvec{P}}-{\varvec{D}}{\varvec{G}}{\varvec{A}}{\varvec{A}}\) suffer from self-heating due to the unavailability of appropriate heat take-out tracks. This Paper analysis the effect of self-heating (SHEs) for \({\varvec{D}}{\varvec{P}}{\varvec{P}}-{\varvec{D}}{\varvec{G}}{\varvec{A}}{\varvec{A}}\) MOSFETs by electro-thermal (ET) simulations with hydrodynamic and thermodynamic transport models. The electrothermal characteristics against various device dimensions such as spacer size, device width,thermal resistance of the contacts, and drain voltage have been investigated. The effect of SHE on the drive current has also been evaluated. Further, Self-heating impacts on thermal noise have been analyzed in detail using Sentauras TCAD simulator.
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Purwar, V., Gupta, R., Tiwari, P.K. et al. Exploring the Self-Heating Effects & Its Impact on Thermal Noise for Dielectric Pocket Packed Double-Gate-All-Around (DPP-DGAA) MOSFETs. Silicon 14, 10217–10224 (2022). https://doi.org/10.1007/s12633-022-01727-2
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DOI: https://doi.org/10.1007/s12633-022-01727-2