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Improved Switching Performance of a Novel Auxiliary Gate Raised Dual Material Hetero-Dielectric Double Gate Tunnel Field Effect Transistor

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Abstract

This paper suggested auxiliary gate raised dual material hetero-dielectric double-gate- tunnel-field-effect-transistor (DGTFET). The recommended device provides greater ON-state current (ION), larger ON/OFF current and lesser sub-threshold swing compared to conventional single material hetero-dielectric DGTFET. The raised gate at the drain terminal as well as use of dual material of the proposed DGTFET provides better performances by decreasing the tunneling barrier size on source channel junction for which band to band tunneling (BTBT) increases which in turns improves the ON-state current. The suggested device is found to have a higher ON/OFF ratio about 1012 and subthreshold swing (SS) of 35 mV/dec in comparison to the conventional device.

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Acknowledgements

The Authors are highly indebted to Indian Institute of Technology (BHU), for supporting TCAD simulation work. The authors also like to acknowledge Ashutosh Kumar Dikshit from VFSTR (Deemed to be University) and Manas Ranjan Tripathy, SOA University for their valuable suggestions.

Availability of Data and Material

The data samples have been taken using proposed analytical model and TCAD simulation.

Funding

No direct funding was received to assist with the work of this manuscript.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Mizoram University (A Central University), Aizawl, 796 004, India

    Brahmdutta Dixit, Reshmi Maity & N. P. Maity

Authors
  1. Brahmdutta Dixit
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  2. Reshmi Maity
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  3. N. P. Maity
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Contributions

All authors contributed to the study conception and design. All authors approve the manuscript. Conceptualization: [Brahmdutta Dixit, Niladri Pratap Maity], Formal analysis and investigation: [Brahmdutta Dixit, Niladri Pratap Maity], Writing-original draft preparation: [Brahmdutta Dixit, Niladri Pratap Maity, Reshmi Maity], Writing-review and editing: [Reshmi Maity], Supervision: [Niladri Pratap Maity].

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Correspondence to Reshmi Maity.

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Dixit, B., Maity, R. & Maity, N.P. Improved Switching Performance of a Novel Auxiliary Gate Raised Dual Material Hetero-Dielectric Double Gate Tunnel Field Effect Transistor. Silicon 14, 6761–6767 (2022). https://doi.org/10.1007/s12633-021-01418-4

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