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Performance Investigation of Carbon Nanotube Based Temperature Compensated Piezoresistive Pressure Sensor

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Abstract

In silicon-based piezoresistive pressure sensor, the accuracy of the sensor is affected mainly by thermal drift and the sensitivity of the sensor varies with the rise in temperature. Here, the temperature effects on the desired representation of the sensor are analysed. Use of smart material Carbon nanotubes (CNT) and a few effective temperature compensation techniques are presented in this study to reduce the temperature effect on the accuracy of the sensor. Resistive compensation employed extra piezoresistors with Negative Temperature Coefficient of Resistivity (TCR) for temperature compensation. The attainment of the desired compensation techniques is highly compatible with the MEMS device fabrication. The compensated pressure sensor is supremacy for pressure measurement with temperature variations. Though various techniques have been suggested and put into actuality with successful attainment, the techniques featuring easy implementation and perfect compatibility with existing schemes are still blooming demanded to design a piezoresistive pressure sensor with perfect comprehensive performance. In this paper, CNT piezoresistive material has been employed as sensing elements for pressure sensor and compared with silicon in terms of output voltage and sensor performance degradation at higher temperature. Pressure sensors using CNT and silicon piezo resistive sensing materials were simulated on silicon (100) diaphragm by ANYSIS. Based on simulation results, silicon and CNT both pressure sensor also shows better results at near room temperature. With the increasing temperature it is observed that silicon pressure output underestimated by 23%.

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References

  1. Lou L, Zhang S, Park WT, Tsai JM, Kwong DL, Lee C (2012) Optimization of NEMS pressure sensors with a multilayered diaphragm using silicon nanowires as piezoresistive sensing elements. J Micromech Microeng 22(5):055012

    Article  Google Scholar 

  2. Sathyanarayanan S, Vimala Juliet A (2011) Simulation of low-pressure MEMS sensor for biomedical application. Journal of Nanotechnology in Engineering and Medicine 2(3)

  3. Meena KV, Mathew R, Sankar AR (2017) Design and optimization of a three-terminal piezoresistive pressure sensor for catheter-based in vivo biomedical applications. Biomedical Physics & Engineering Express 3(4):045003

    Article  Google Scholar 

  4. Xu Y, Hu X, Kundu S, Nag A, Afsarimanesh N, Sapra S, Mukhopadhyay SC, Han T (2019) Silicon-based sensors for biomedical applications: a review. Sensors 19(13):2908

    Article  CAS  Google Scholar 

  5. Guan T, Yang F, Wang W, Huang X, Jiang B, Zhang D (2016) The design and analysis of piezoresistive shuriken-structured diaphragm micro-pressure sensors. J Microelectromech Syst 26(1):206–214.5

    Article  Google Scholar 

  6. Mohamad M, Soin N, Ibrahim F (2018) Design optimisation of high sensitivity MEMS piezoresistive intracranial pressure sensor using Taguchi approach. Microsyst Technol 24(6):2637–2652

    Article  CAS  Google Scholar 

  7. Li C, Cordovilla F, Jagdheesh R, Ocaña JL (2018) Design optimization and fabrication of a novel structural SOI piezoresistive pressure sensor with high accuracy. Sensors 18(2):439

    Article  Google Scholar 

  8. Zhao X, Yu Y, Li D, Wen D (2015) Design, fabrication, and characterization of a high-sensitivity pressure sensor based on nano-polysilicon thin-film transistors. AIP Adv 5(12):127216

    Article  Google Scholar 

  9. Ali A, Khan A, Ali A, Ahmad M (2017) Pressure-sensitive properties of carbon nanotubes/bismuth sulfide composite materials. Nanomaterials and Nanotechnology 7:18

    Article  Google Scholar 

  10. Li J, Zhang C, Zhang X, He H, Liu W, Chen C (2020) Temperature compensation of Piezo-resistive pressure sensor utilizing ensemble AMPSO-SVR based on improved Adaboost. RT. IEEE Access 8:12413–12425

    Article  Google Scholar 

  11. Kayed MO, Balbola AA, Moussa WA (2019) A new temperature transducer for local temperature compensation for piezoresistive 3-D stress sensors. IEEE/ASME Transactions on Mechatronics 24(2):832–840

    Article  Google Scholar 

  12. Bala S, Khosla M (2018) Design and simulation of nanoscale double-gate TFET/tunnel CNTFET. J Semicond 39(4):044001

    Article  Google Scholar 

  13. Bala S, Khosla M (2018) Comparative study and analysis of cntfet and tunnel cntfet. J Nanoelectron Optoelectron 13(3):324–330

    Article  Google Scholar 

  14. Bala S, Khosla M (2018) Design and analysis of electrostatic doped tunnel CNTFET for various process parameters variation. Superlattice Microst 124:160–167

    Article  CAS  Google Scholar 

  15. Tran AV, Zhang X, Zhu B (2018) Mechanical structural design of a piezoresistive pressure sensor for low-pressure measurement: a computational analysis by increases in the sensor sensitivity. Sensors 18(7):2023

    Article  Google Scholar 

  16. Devi R, Gill SS (2021) A squared bossed diaphragm piezoresistive pressure sensor based on CNTs for low pressure range with enhanced sensitivity. Microsyst Technol

  17. Katageri AC, Sheeparamatti BG (2015) Carbon Nanotube based Piezoresistive Pressure Sensor for Wide Range Pressure Sensing Applications-A Review. International Journal of Engineering Research and 4(08):27

    Google Scholar 

  18. Helbling T, Roman C, Durrer L, Stampfer C, Hierold C (2011) Gauge factor tuning, long-term stability, and miniaturization of nanoelectromechanical carbon-nanotube sensors. IEEE transactions on electron devices 58(11):4053–4060

    Article  CAS  Google Scholar 

  19. Tran AV, Zhang X, Zhu B (2019) Effects of temperature and residual stresses on the output characteristics of a piezoresistive pressure sensor. IEEE Access 7:27668–27676

    Article  Google Scholar 

  20. Balavalad, K. B., & Sheeparamatti, B. G. (2018December). Design, simulation & analysis of Si, SOI & Carbon Nanotube (CNT) based micro Piezoresistive pressure sensor for a High Temperature & Pressure. In 2018 International Conference on Circuits and Systems in Digital Enterprise Technology (ICCSDET) (pp. 1-6). IEEE

  21. Sosa J, Montiel-Nelson JA, Pulido R, Garcia-Montesdeoca JC (2015) Design and optimization of a low power pressure sensor for wireless biomedical applications. Journal of Sensors 2015:1–13

    Article  Google Scholar 

  22. Jang D, Hong Y, Hong S, Lee JH (2019) A novel barometric pressure sensor based on Piezoresistive effect of polycrystalline silicon. JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 19(2):172–177

    Article  Google Scholar 

  23. Zhou G, Zhao Y, Guo F, Xu W (2014) A smart high accuracy silicon piezoresistive pressure sensor temperature compensation system. Sensors 14(7):12174–12190

    Article  CAS  Google Scholar 

  24. Monea BF, Ionete EI, Spiridon SI, Ion-Ebrasu D, Petre E (2019) Carbon nanotubes and carbon nanotube structures used for temperature measurement. Sensors 19(11):2464

    Article  CAS  Google Scholar 

  25. Kerrour F, Boukabache A, Pons P (2012) Modelling of Thermal Behavior N-Doped Silicon Resistor. Modelling of thermal behavior N-doped silicon resistor

    Chapter  Google Scholar 

  26. Chiou JA, Chen S (2007) Thermal hysteresis and voltage shift analysis for differential pressure sensors. Sensors Actuators A Phys 135(1):107–112

    Article  CAS  Google Scholar 

  27. Zhang S, Wang T, Lou L, Tsang WM, Sawada R, Kwong DL, Lee C (2014) Annularly grooved diaphragm pressure sensor with embedded silicon nanowires for low pressure application. J Microelectromech Syst 23(6):1396–1407

    Article  CAS  Google Scholar 

  28. Furlan H, Fraga MA, Koberstein LL, Rasia LA Modeling of MEMS Piezoresistive Sensors. Pesquisas Aplicadas em Modelagem Matemática:215–240

  29. Suja KJ, Kumar GS, Nisanth A, Komaragiri R (2015) Dimension and doping concentration based noise and performance optimization of a piezoresistive MEMS pressure sensor. Microsyst Technol 21(4):831–839

    Article  CAS  Google Scholar 

  30. Liu Y, Wang H, Zhao W, Qin H, Fang X (2016) Thermal-performance instability in piezoresistive sensors: inducement and improvement. Sensors 16(12):1984

    Article  Google Scholar 

  31. Abdelaziz B, Fouad K, Kemouche S (2014) The effect of temperature and doping level on the characteristics of piezoresistive pressure sensor. Journal of Sensor Technology 4(2):59–65

    Article  Google Scholar 

  32. Yao Z, Liang T, Jia P, Hong Y, Qi L, Lei C, Xiong J (2016) A high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit. Sensors 16(6):913

    Article  Google Scholar 

  33. Yao Z, Liang T, Jia P, Hong Y, Qi L, Lei C, Zhang B, Li W, Zhang D, Xiong J (2016) Passive resistor temperature compensation for a high-temperature piezoresistive pressure sensor. Sensors 16(7):1142

    Article  Google Scholar 

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SS Gill given the concepts and helped in Implementations of work, Proof Rekha has done simulations and implemented the concept and written work.

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Correspondence to Rekha Devi.

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Devi, R., Gill, S.S. Performance Investigation of Carbon Nanotube Based Temperature Compensated Piezoresistive Pressure Sensor. Silicon 14, 3931–3938 (2022). https://doi.org/10.1007/s12633-021-01153-w

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