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Impact of Circular Layout on Characteristics in LSAMBM APD Based on SOI Film

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Abstract

Lateral separate absorption multi-buffer multiplication avalanche photodiode (LSAMBM APD) with rectangular layout based on SOI film had been investigated as a promising candidate in the high-speed weak-light detection application. In this article, the layout-dependent characteristics of LSAMBM APD were investigated furthermore. Comparing to rectangular layout, the circular layout could shorten the length and improve electric field intensity of absorption region under the same sensitive area. In this way, carriers’ drift velocity could be accelerated, and the photon-generated carriers would be more effectively separated to achieve high responsivity and fast frequency response in LSAMBM APD with circular layout. When the illumination wavelength was 400 nm and input optical power was 0.001 W/cm2, the circular layout could enhance LSAMBM APD to achieve high responsivity and fast frequency response under the reverse bias voltage of 8.11 V and 9.2 V, and reach to 1236.9A/W and 3.2GHz, respectively. All results revealed that the LSAMBM APD with circular layout was more appropriate to high-speed single photon detection systems.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant no. 61404011), in part by the key projects of Changsha science and technology plan (Grant no. kq1901102), in part by the Scientific Research Fund of Hunan Provincial Education Department (Grant no. 20 K007), and in part by “Double first-class” international cooperation project in scientific research of Changsha University of Science and Technology (Grant no. 2019IC20). We are grateful to Professor Denis Flandre from Université catholique de Louvain for his assistance throughout this study.

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The data sets supporting the results of this article are included within the article.

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Funding

This work was supported by the National Natural Science Foundation of China (Grant no. 61404011), in part by the key projects of Changsha science and technology plan (Grant no. kq1901102), in part by the Scientific Research Fund of Hunan Provincial Education Department (Grant no. 20 K007), and in part by “Double first-class” international cooperation project in scientific research of Changsha University of Science and Technology (Grant no. 2019IC20).

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Authors and Affiliations

  1. School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha, Hunan, China

    Haiqing Xie, Gang Liu, Xiya Cai, Junlin Lu & Xinbo Yi

  2. Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha, Hunan, China

    Haiqing Xie

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  1. Haiqing Xie
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  4. Junlin Lu
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Contributions

All authors contributed to the study conception and design. Model establish, data collection and analysis were performed by Haiqing Xie, Xiya Cai, Junlin Lu and Xinbo Yi. The first draft of the manuscript was written by Haiqing Xie and Gang Liu, and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to Haiqing Xie.

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Xie, H., Liu, G., Cai, X. et al. Impact of Circular Layout on Characteristics in LSAMBM APD Based on SOI Film. Silicon 14, 3395–3401 (2022). https://doi.org/10.1007/s12633-021-01104-5

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