Skip to main content

Advertisement

SpringerLink
Log in

A Simulation Approach to Study the Effect of SiC Polytypism Factor on Sensitivity of Piezoresistive MEMS Pressure Sensor

  • Original Paper
  • Published:
Silicon Aims and scope Submit manuscript

Abstract

SiC is a well known wide band gap semiconductor explored for realizing the piezoresistive micro-electro-mechanical systems (MEMS) pressure sensors for harsh environments. In this work a thin SiC diaphragm based piezoresistive pressure sensor was designed by locating the resistors of different SiC polytypes such as 3C, 4H, and 6H-SiC, on highly stressed zone of the diaphragm and analyzed. The sensor design parameters were extensively studied by executing the finite element method (FEM) and piezoresistive simulation using device simulation software. The sensor characteristics were measured for different SiC polytypes and compared for different design parameter variations to obtain the optimum sensor performance under the influence of the pressure upto 8 MPa. Influence of temperature for heavily doped SiC polytypes is also studied. The simulation results shows that the pressure sensor with 3C-SiC polytype offers higher sensitivity 7.3 μV/V/KPa as compared to 4H-SiC and 6H-SiC polytypes.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Data Availability

All data generated or analyzed during this study are included in this article.

References

  1. Muller G, Krotz G, Niemann E (1994) SiC for sensors and high temperature electronics. Sensors Actuators A 43:259–268

    Article  Google Scholar 

  2. Tilak V, Matocha K, Sandvik P (2006) Novel GaN and SiC based gas sensors. phys stat sol 3:548–553

  3. Crnjac A, Skukan N, Provatas G, Mauricio R-R, Pomorski M, Jaksic M (2020) Electronic properties of a synthetic single crystal diamond exposed to high temperature and high radiation. Materials 13(11):2473

    Article  CAS  Google Scholar 

  4. Wijesundara MBJ, Azevedo RG (2011) Silicon carbide microsystems for harsh environments. Springer, London

    Book  Google Scholar 

  5. Wright NG, Horsfall AB, Vassilevski K (2008) Prospects for SiC electronics and sensors. Mater Today 11:16–21

    Article  CAS  Google Scholar 

  6. Senesky DG, Jamshidi B, Cheng KB, Pisano AP (2009) Harsh environment silicon carbide sensors for health and performance monitoring of aerospace systems: a review. IEEE Sensors J 9:1472–1478

    Article  CAS  Google Scholar 

  7. Ruddy FH, Dulloo AR, Seidel JG, Hantz FW, Grobmyer LR (2002) Nuclear reactor power monitoring using silicon carbide semiconductor radiation detectors. Nucl Technol 140:198–208

    Article  CAS  Google Scholar 

  8. Phan H-P, Nguyen T-K, Dinh T, Qamar A, Iacopi A, Lu J, Dao DV, Mina R-Z, Nguyen N-T (2019) Wireless battery free SiC sensors operating in harsh environments using resonant inductive coupling. IEEE Electron Device Lett 40:609–612

  9. Azevedo R, Zhang J, Jones D, Myers D, Jog AV, Jamshidi B, Wijesundara M, Maboudian R, Pisano AP (2007) Silicon carbide coated MEMS strain sensor for harsh environment applications. Proc IEEE Int Conf on Micro Electro Mechanical Systems (MEMS), Technical Digest 643-646

  10. Muranaka T, Kikchi Y, Yoshizawa T, Shirakawa N, Akimitsu J (2008) Superconductivity in carrier-doped silicon carbide. Sci Technol Adv Mater 9:044204

    Article  Google Scholar 

  11. Park CH, Cheong B-H, Lee K-H, Chang KJ (1994) Structural and electronic properties of cubic 2H, 4H, and 6H-SiC. Phys Rev B 49(7):4485–4493

    Article  CAS  Google Scholar 

  12. Zettterling C-M (2002) Process Technology for Silicon Carbide Devices. INSPEC, Salford

    Book  Google Scholar 

  13. Shi Y, Jokubavicius V, Hojer P, Ivanov IG, Yazdi G, Yakimova R, Syvajarvi M, Sun JW (2019) A comparative study of high-quality C-face and Si-face 3C-SiC(1 1 1) grown on off-oriented 4H-SiC substrates. J Phys D Appl Phys 52:345103

  14. LaVia F, Severino A, Anzalone R, Bongiorno C, Litrico G, Mauceri M, Schoeler M, Schuh P, Wellmann P (2018) From thin film to bulk 3C-SiC growth: understanding the mechanism of defects reduction. Mater Sci Semicond Process 78:57–68

    Article  CAS  Google Scholar 

  15. Phan H-P, Dao DV, Tanner P, Wang L, Nguyen N-T, Zhu Y, Dimitrijev S (2014) Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC. Appl Phys Lett 104:111905

    Article  Google Scholar 

  16. Nguyen T-K, Phan H-P, Toan D, Toriyama T, Nakamura K, ARM F, Nguyen N-T, Dao DV (2018) Isotropic piezoresistance of p-type 4H-SiC in (0001) plane. Appl Phys Lett 113:012104

    Article  Google Scholar 

  17. Barlian AA, Park W-T, Mallon JR, Rastegar AJ, Pruitt BL (2009) Review:semiconductor piezoresistance for microsystems. Proc IEEE Inst Electr Electron Eng 97(3):513–552

  18. Stampfer C, Heldling T, Obergfell D, Schoberle B, Tripp MK, Jungen A, Roath S, Bright VM, Hierold C (2006) Fabrication of single-walled carbon-nanotube-based pressure sensors. Nano Lett 6(2):233–237

    Article  CAS  Google Scholar 

  19. Neuzil P, Wong CC, Reboud J (2010) Electrically controlled giant piezoresistance in silicon nanowires. Nano Lett 10:1248–1252

    Article  CAS  Google Scholar 

  20. Janssens SD, Drijkoningen S, Haenen K (2014) Ultra-thin nanocrystalline diamond membranes as pressure sensors for harsh environments. Appl Phys Lett 104:073107

    Article  Google Scholar 

  21. Phan H-P, Dao DV, Nakamura K, Dimitrijev S, Nguyen N-T (2015) The piezoresistive effect of SiC for MEMS sensors at high temperatures: A Review. J Microelectromech Syst 24(6):1663–1677

    Article  CAS  Google Scholar 

  22. Wu C-H, Stefanescu S, Kuo H-I, Zorman CA, Mehregany M (2001) Fabrication and testing of single crystalline 3C-SiC piezoresistive pressure sensors. Transducers’ 01 Eurosensors XV. Springer, Berlin, pp 514–517

    Chapter  Google Scholar 

  23. SiC substrate provider (2020) https://www.wolfspeed.com. Accessed on 20 Oct 2020

  24. Henry A, Xun L, Jacodson H (2013) 3C–SiC heteroepitaxy on hexagonal SiC substrate. Mater Sci Forum 740:257–262

    Article  Google Scholar 

  25. Lebdev AA, Lebedev SP, Davydov V Yu, Novikov SN, Makarov Yu N (2016) Growth and investigation SiC based heterostructures. 15th Biennial Baltic Electronics Con, Tallinn, Estonia https://doi.org/10.1109/BEC.2016.7743717

  26. Jokubavicius V, Yazdi GR, Liljedah R, Ivanov IG, Sun J, Xinyu L et al (2015) Single domain 3C-SiC growth on off-oriented 4H-SiC substrates. Cryst Growth Des 15:2940–2947

    Article  CAS  Google Scholar 

  27. Tai-Ran H (2008) MEMS and microsystems: design manufacture and Nanoscale engineering. Wiley, Hoboken

    Google Scholar 

  28. Mario DG (1982) Flat and corrugated diaphragm design handbook. CRC Press, Boca Raton

    Google Scholar 

  29. Nguyen TK (2018) Piezoresistive effect in 4H silicon carbide towards mechanical sensing in harsh environments PhD Griffith Universiry

  30. Okojie RS, Ned AA, Kurtz AD, Carr WN (1998) Characterization of highly doped n- and p-type 6H-SiC piezoresistors. IEEE Trans Electron Devices 45(4):785–790

    Article  CAS  Google Scholar 

  31. Takaya S, Takahashi N, Nakano N (2020) The piezoresistive mobility modeling for cubic and hexagonal silicon carbide crystals. J Appl Phys 127:245113

    Article  Google Scholar 

  32. Ziermann R, Berg JV, Obermeier E, Wischmeyer F, Niemann E, Moller H, Eickhoff M, Krotz G (1999) High temperature piezoresistive β-SiC–on-SOI pressure sensor with on chip SiC thermistor. Mater Sci Eng 61-62:576–578

    Article  Google Scholar 

  33. Wu C-H, Zorman CA, Mehran M (2006) Fabrication and testing of bulk micromachined silicon carbide piezoresistive pressure sensors for high temperature applications. IEEE Sensors J 6:316–324

    Article  CAS  Google Scholar 

  34. Okojie RS, Lukco D, Nguyen V, Savrun E (2015) 4H-SiC piezoresistive pressure sensors at 800 °C with observed sensitivity recovery. IEEE Electron Device Lett 36(2):174–176

    Article  Google Scholar 

  35. Akiyama T, Briand D, Rooij NF (2011) Piezoresistive n-type 4H-SiC pressure sensor with membrane formed by mechanical milling. Proc IEEE Sens:222–225 https://doi.org/10.1109/ICSENS.2011.6126936

  36. Okojie RS, Ned AA, Kurtz AD (1998) Operation of α(6H)-SiC presusre sensor at 500°C. Sensors Actuators A 66:200–204

    Article  CAS  Google Scholar 

  37. Wieczorek G, Schellin B, Obermeier E, Fagnani G, Drera L (2007) SiC based pressure sensor for high-temperature environments. Proc IEEE Sens:748–751 https://doi.org/10.1109/ICSENS.2007.4388508

Download references

Acknowledgements

Authors are grateful to all the scientific and technical staff of Electronics & Instrumentation Group to execute the work and allowed to use the facilities.

Author information

Authors and Affiliations

  1. Real Time Systems Division, Indira Gandhi Centre for Atomic Research, Homi Bhabha National Institute, Kalpakkam, Tamil Nadu, 603102, India

    Mahesh Kumar Patankar, M. Kasinathan, R. P. Behera & T. Jayanthi

  2. Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Homi Bhabha National Institute, Kalpakkam, Tamil Nadu, 603102, India

    Sandip Dhara

Authors
  1. Mahesh Kumar Patankar
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. Kasinathan
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. R. P. Behera
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. T. Jayanthi
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Sandip Dhara
    View author publications

    You can also search for this author in PubMed Google Scholar

Contributions

All authors discussed the content of the article, based on their domain expertise on the subjects presented. M. K. Patankar and M. Kasinathan prepare and run the simulation work. R. P. Behera developed the idea. S. Dhara and T. Jayanthi supervised the study and discussed the results, proofread the manuscript, and confirmed its findings. All authors read and approved the final manuscript.

Corresponding author

Correspondence to Mahesh Kumar Patankar.

Ethics declarations

Authors followed the ethical standards.

Consent to Participate

Not applicable.

Consent for Publication

This manuscript does not contain any individual person’s data in any form.

Conflict of Interests

The authors declare that they have no conflict of interests (financial and non- financial).

Additional information

Publisher’s Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Patankar, M.K., Kasinathan, M., Behera, R.P. et al. A Simulation Approach to Study the Effect of SiC Polytypism Factor on Sensitivity of Piezoresistive MEMS Pressure Sensor. Silicon 14, 3307–3315 (2022). https://doi.org/10.1007/s12633-021-01073-9

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s12633-021-01073-9

Keywords

Search

Navigation