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Computational Modeling on the Influence of the Schmidt Number on Second Phase Impurities SiC, Si2N2O and Si3N4 in Grown mc-Silicon for PV Applications

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Abstract

The influence of the Schmidt number on the incorporation of SiC, Si2N2O and Si3N4 precipitate formation during directional solidification of mc-silicon was investigated. SiC, Si2N2O and Si3N4 particles that precipitate in multi-crystalline silicon for PV application have detrimental effects on the wafer sawing process and solar cell performance. Time-dependent numerical modelling of the mass transport phenomena has been used with a diffusion model. There is still no study on the Schmidt number during the mc-silicon growth process. So, the numerical study has been investigated on the formation of second phase inclusions in mc-silicon for various Schmidt numbers. It may be used to control the precipitate of SiC, Si2N2O and Si3N4 in a mc-silicon ingot. In this paper, the second phase inclusions that precipitate in the mc-silicon ingot have been simulated and analyzed for three different Schmidt numbers Sc = 1, Sc = 10 and Sc = 100. From the obtained results, Schmidt number Sc = 1 is found to grow better quality mc-silicon crystals.

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  1. SSN Research centre, SSN College of Engineering, Chennai, 603110, India

    M. Srinivasan & P. Ramasamy

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  1. M. Srinivasan
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  2. P. Ramasamy
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Correspondence to M. Srinivasan.

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Srinivasan, M., Ramasamy, P. Computational Modeling on the Influence of the Schmidt Number on Second Phase Impurities SiC, Si2N2O and Si3N4 in Grown mc-Silicon for PV Applications. Silicon 10, 1077–1085 (2018). https://doi.org/10.1007/s12633-017-9574-5

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  • DOI: https://doi.org/10.1007/s12633-017-9574-5

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