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Vertically grown MoS2 nanosheets on graphene with defect-rich structure for efficient sodium storage

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Abstract

The synthesis of a perpendicular growth structure of MoS2 nanosheets on graphene for efficient sodium storage is challenging yet ideal due to the benefits of open ion diffusion channels and high electronic conductivity. In this study, we have successfully fabricated a novel structure of vertical MoS2 nanosheets on graphene, with ZnS nanoparticles serving as bonding points (MoS2/ZnS/G), through a facile hydrothermal method. During the synthesis process, Zn2+ not only acts as a landing site for the vertical growth of MoS2 nanosheets but also triggers the formation of a defect-rich structure in the final samples. This unique architecture of MoS2/ZnS/G effectively combines the advantages of a vertically aligned geometry and a defect-rich structure for energy storage. The resulting structure displays shortened transport paths for electrons/ions, enhanced conductivity, improved structural integrity, and an increased number of active sites for promising electrochemical performance. As expected, when used as anode for sodium-ion batteries, the as-synthesized MoS2/ZnS/G exhibits excellent rate capability (high capacity of 298 mAh·g−1 at 5 A·g−1) and good cycling stability (a capacity decay of 0.056% per cycle after 500 cycles at 1 A·g−1). According to the kinetic investigations, the electrochemical process of the MoS2/ZnS/G sample is primarily governed by a pseudocapacitive behavior, which enhances the charge/discharge kinetics and allows the MoS2/ZnS/G structure to remain intact during cycling.

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摘要

近年来，钠离子电池（SIBs）作为锂离子电池（LIBs）的一种有前景的替代品，由于其低成本和天然丰富的钠资源而受到越来越多的关注。然而，与Li+相比，Na+的离子半径更大，反应动力学更慢，在循环过程中往往导致电极发生严重的体积膨胀和极化，致使电池的循环寿命差，可逆容量低。因此，设计合理的电极材料，提高电化学性能，是实现SIBs实际应用的关键。在本文中，我们通过简单的水热法，以ZnS纳米颗粒作为键合点，成功地在石墨烯上制备了一种新型的垂直生长的MoS2纳米片结构（MoS2/ZnS/G）。在合成过程中，Zn2+不仅作为MoS2纳米片垂直生长的着落点，而且触发了最终样品中富缺陷结构的形成。这种独特的MoS2/ZnS/G结构有效地结合了垂直排列的几何形状和富含缺陷的储能结构的优点。所得到的结构使得材料的电子/离子传输路径缩短，电导率增强，结构完整性改善，活性位点数量增加，具有良好的电化学性能。正如预期的那样，当用作钠离子电池的负极时，合成的MoS2/ZnS/G表现出优异的倍率性能（在5 A g−1下的高容量为298 mAh g−1）和良好的循环稳定性（在1 A g−1电路密度下可下循环500次，每周循环容量衰减0.056%）。动力学研究表明，MoS2/ZnS/G样品的电化学过程主要由赝电容行为控制，这增强了MoS2/ZnS/G材料的动力学性能，并使其在循环过程中保持完整的结构。

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Acknowledgements

This work was financially supported by the Natural Science Foundation of Jiangsu Province (No. BK20211352) and the Nature Science Fundation of Jiangsu Higher Education Institutions of China (No. 22KJA430005).

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  1. Ying Wang and Jia-Peng He have contributed equally to this work.

Authors and Affiliations

  1. School of Chemistry & Materials Science, Jiangsu Key Laboratory of Green Synthetic Chemistry for Functional Materials, Jiangsu Normal University, Xuzhou, 221116, China

    Ying Wang, Jia-Peng He, Han-Qing Pan & Qing-Hong Wang

  2. Institute of Biopharmaceutical Research, Liaocheng University, Liaocheng, 252059, China

    Qing-Peng Wang

  3. Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, , Beijing, 10083, China

    Yong-Chang Liu

  4. Centre for Catalysis and Clean Energy, Gold Coast Campus, Griffith University, Gold Coast, QLD, 4222, Australia

    Lei Zhang

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  1. Ying Wang
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Wang, Y., He, JP., Pan, HQ. et al. Vertically grown MoS2 nanosheets on graphene with defect-rich structure for efficient sodium storage. Rare Met. 43, 1062–1071 (2024). https://doi.org/10.1007/s12598-023-02447-1

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