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Two-dimensional MoS2/diamond based heterojunctions for excellent optoelectronic devices: current situation and new perspectives

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Abstract

Two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) can be used as n-channel and is considered as a key candidate material to advance the promising development of optoelectronic device. The high thermal conductivity, breakdown voltage, carrier mobility, and high saturation velocity of diamond offer the possibility of making it high-frequency device material in high-temperature and high-power fields. The addition of 2D MoS2 nanolayers and nanosheets to diamond thin film to form heterojunction can improve the carrier transport performance of the optoelectronic device in harsh environments. In this perspective, the prospects of 2D MoS2/diamond heterojunction for challenges and new designs of optoelectronic applications are discussed, including photodetectors, memories, transistors, light emission diodes, and electron field emission devices to further explore the development of 2D material device field in complex environments.

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摘要

二维 (2D) 半导体二硫化钼 (MoS2) 可以用作n沟道, 被认为是推进光电器件发展前景的关键候选材料。金刚石具有高的热导率、击穿电压、载流子迁移率和高饱和速度, 使其成为高温和高功率领域的高频器件材料。金刚石薄膜与2D MoS2纳米层或纳米片构成异质结可以改善光电器件在恶劣环境中的载流子传输性能。从这个角度, 我们讨论了2D二硫化钼/金刚石异质结在光电应用领域的挑战和新设计方面的前景, 包括光电探测器、存储器、晶体管、发光二极管和电子场发射器件, 以进一步探索复杂环境下2D材料器件领域的发展。

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Nos. 62104090, 11604133 and 62205011), the Natural Science Foundation of Shandong Province (No. ZR2017QA013), the Science and Technology Plan of Youth Innovation Team for Universities of Shandong Province (No. 2019KJJ019), the Open Project of State Key Laboratory of Superhard Materials, Jilin University (Nos. 201503 and 201612), the Fundamental Research Funds for the Central Universities (No. buctrc 202122), the Research Funding of Liaocheng University (Nos. 318012016, 318051610, 318052136 and 318051612), the Open Research Project of Zhejiang province Key Laboratory of Quantum Technology and Device (No. 20220401), the Open Research Project of Special Display and Imaging Technology Innovation Center of Anhui Province (No. 2022AJ05001) and the Special Construction Project Fund for Shandong Province Taishan Scholars.

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  1. Liang-Rui Zou and Xiao-Dan Lyu contributed equally to this work.

Authors and Affiliations

  1. Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng, 252000, China

    Liang-Rui Zou, Dan-Dan Sang, Yu Yao, Shun-Hao Ge, Xue-Ting Wang, Chuan-Dong Zhou & Qing-Lin Wang

  2. College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing, 100029, China

    Cong Wang

  3. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore

    Xiao-Dan Lyu

  4. Shandong Liaocheng Laixin Powder Materials Science and Technology Co., Ltd., Liaocheng, 252000, China

    Dan-Dan Sang, Jian-Chao Fan & Qing-Lin Wang

  5. Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310027, China

    Hai-Long Fu

  6. The Institute of Anhui Huadong Photoelectric Technology, Wuhu, 241002, China

    Hong-Zhu Xi

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Zou, LR., Lyu, XD., Sang, DD. et al. Two-dimensional MoS2/diamond based heterojunctions for excellent optoelectronic devices: current situation and new perspectives. Rare Met. 42, 3201–3211 (2023). https://doi.org/10.1007/s12598-023-02381-2

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