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Revealing layer-dependent interlayer interactions by doping effect on graphene in WSe2/N-layer graphene heterostructures using Raman and photoluminescence spectroscopy

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Assembling layered materials in the form of vertically stacked heterostructures has enabled the combination of various properties from different two-dimensional (2D) materials, which is receiving a great deal of attention for investigating novel physical phenomena and emerging a facile way to fabricate promising highly tailored architectures. In this study, we employ Raman and photoluminescence (PL) spectroscopy to systematically investigate the influence of thickness on interlayer interaction in WSe2/n-layer graphene (WSe2/nL-Gr, n = 1, 2, 3, 4) heterostructures. It is found that the charge carrier concentration of graphene can be significantly affected by distinct interlayer coupling originated from heterostructure interface. The observed varying doping levels in graphene as layer number (nL) increases from 1L to 4L are quantitatively studied by considering the screening effects and band structure. On the other hand, the corresponding change of electronic band structure of WSe2 is further discussed after introducing graphene, PL intensity in WSe2/N-Gr heterostructures is quenched by more than 2 orders of magnitude which suggests ultra-efficient interlayer charge transfer occurs. Meanwhile, the various screening effects from graphene with different nL can account for the evolution of band structure of WSe2, which is in good agreement with the layer-dependent doping effect in graphene. This work offers a comprehensive investigation on nL dependence of interface coupling in WSe2/N-Gr heterostructures. Our observations also demonstrate that the physical properties of each component in heterostructures can be effectively tuned by the other one, which will drive the development of heterostructures in electronic and optoelectronic devices.

摘要

将不同性质的二维材料组装成垂直异质结构已经成为一种有效的研究新颖物理现象和制备可控结构的简单易行方法而被广泛关注。本文通过拉曼和光致发光光谱系统研究了石墨烯层数 (1至4层) 对二硒化钨/石墨烯异质结层间相互作用的影响, 揭示了不同层数石墨烯由于介电屏蔽效应和能带结构引起的不同层间相互作用而导致载流子浓度不同。另一方面研究了不同层数石墨烯对二硒化钨电子能带结构的影响, 异质结区域二硒化钨光致发光强度淬灭两个数量级, 表明石墨烯和二硒化钨之间高效率的电荷转移过程, 同时二硒化钨不同的能带结构改变源自于石墨烯层数依赖的介电屏蔽效应, 这与石墨烯中层数依赖的掺杂效应一致。本工作对二硒化钨/石墨烯中石墨烯层数依赖的不同层间耦合做了系统研究, 阐述了异质结构中材料层数对异质结特性的有效调控, 推动了异质结在电子器件和光电器件中的应用和发展。

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Acknowledgements

This study was financially supported by the National Key R&D Program of China (No. 2018YFA0703700), the National Natural Science Foundation of China (Nos. 61774040 and 61774042), Shanghai Municipal Natural Science Foundation (No. 20ZR1403200), Shanghai Municipal Science and Technology Commission (No. 18JC1410300), Fudan University-CIOMP Joint Fund (No. FC2018-002), the National Young 1000 Talent Plan of China, “First-Class Construction” Project of Fudan University (No. XM03170477) and the State Key Laboratory of ASIC & System, Fudan University (No. 2018MS001).

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  1. Ya-Bing Shan and Xiao-Fei Yue contributed equally to this work.

Authors and Affiliations

  1. School of Information Science and Technology, Fudan University, Shanghai, 200433, China

    Ya-Bing Shan, Xiao-Fei Yue, Jia-Jun Chen, Jin-Kun Han, Garel Ekoya, Lai-Gui Hu, Ran Liu, Zhi-Jun Qiu & Chun-Xiao Cong

  2. Yiwu Research Institute of Fudan University, Yiwu, 322000, China

    Ya-Bing Shan & Chun-Xiao Cong

  3. Academy for Engineering and Technology, Fudan University, Shanghai, 200433, China

    Chun-Xiao Cong

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  1. Ya-Bing Shan
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Shan, YB., Yue, XF., Chen, JJ. et al. Revealing layer-dependent interlayer interactions by doping effect on graphene in WSe2/N-layer graphene heterostructures using Raman and photoluminescence spectroscopy. Rare Met. 41, 3646–3653 (2022). https://doi.org/10.1007/s12598-022-02053-7

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