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Synthesis of one-dimensional GaN nanorods by Tb intermediate layer with different thicknesses

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Abstract

GaN nanorods were synthesized by magnetron sputtering and ammonification system, and the thickness of Tb intermediate layer was changed to study the effect on GaN nanorods. The resultant was tested by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) spectra. The results show that the thickness of Tb layer has an evident effect on the modality, quality, and luminescence properties of GaN nanorods. PL spectra at room temperature show a very strong emission peak at 368 nm and a weak emission peak at 387 nm, and the intensities of the peak for the produced samples reach the maximum when Tb layer is 20 nm. Finally, the optimal thickness of 20 nm of Tb intermediate layer for synthesizing GaN nanostructures is achieved.

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Acknowledgments

This study was financially supported by the National Natural Science Foundation of China (Nos. 90301002 and 90201025).

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Authors and Affiliations

  1. Department of Mechanical and Electrical Engineering, Zhenjiang Vocational Technical College, Zhenjiang, 212016, China

    Jin-Hua Chen, Ping Shi, Yu-Lan Li & Xue-Lei Sun

  2. College of Physics and Electronics, Shandong Normal University, Ji’nan, 250014, China

    Cheng-Shan Xue

  3. College of Mathematics and Physics, Jiangsu University of Science and Technology, Zhenjiang, 212001, China

    Ji-Yuan Guo

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  1. Jin-Hua Chen
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  2. Ping Shi
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  3. Yu-Lan Li
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  4. Xue-Lei Sun
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Correspondence to Jin-Hua Chen.

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Chen, JH., Shi, P., Li, YL. et al. Synthesis of one-dimensional GaN nanorods by Tb intermediate layer with different thicknesses. Rare Met. 35, 937–939 (2016). https://doi.org/10.1007/s12598-014-0351-y

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  • DOI: https://doi.org/10.1007/s12598-014-0351-y

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