Abstract
The influence of film deposition techniques on the thermal boundary resistance of an aluminum (Al)/silicon (Si) interface was investigated in this study. Al films 100 nm in thickness were deposited on Si(100) wafers using an e-beam evaporator and a direct current (DC) magnetron sputtering system. Their microstructural characteristics were inspected using scanning electron microscopy with energy dispersive spectroscopy, atomic force microscopy, and X-ray diffraction. The thermal boundary resistance values of the samples were measured using the time-domain thermoreflectance technique and numerically analyzed based on the transient Fourier heat conduction equation. A non-equilibrium molecular dynamics (MD) study was carried out to understand the effect of the atomic disorder at the film/substrate interface. Results show that the film produced by DC sputtering has a rougher surface than that of the e-beam evaporated one and a higher thermal boundary resistance. This is in agreement with the qualitative trend observed from the MD simulation that showed increases in thermal boundary resistance with the depth of atom intermixing.
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Abbreviations
- C p :
-
Specific heat
- G :
-
Thermal boundary resistance
- I 0 :
-
Laser intensity
- N :
-
Number of atoms
- R :
-
Reflectance
- T :
-
Temperature
- W :
-
Laser heating function
- d :
-
Film thickness
- k B :
-
Boltzmann constant
- i :
-
Index of atom
- m :
-
Mass
- q :
-
Heat flux
- r RMS :
-
Root mean square roughness
- t :
-
Time
- v :
-
Velocity
- z :
-
Distance in the film thickness direction
- β :
-
Absorption depth
- κ :
-
Thermal conductivity
- λ :
-
Wavelength
- ρ :
-
Density
- τ :
-
Pulse width
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Acknowledgements
This research was supported by the National Research Foundation of Korea funded by the Korean government (Ministry of Science & ICT, Grant No. 2015R1C1A1A01053635).
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Suk, M.E., Kim, Y.Y. Influence of Deposition Techniques on the Thermal Boundary Resistance of Aluminum Thin-Films. Int. J. Precis. Eng. Manuf. 20, 1435–1441 (2019). https://doi.org/10.1007/s12541-019-00160-7
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DOI: https://doi.org/10.1007/s12541-019-00160-7