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Controlled growth of vertically stacked In2Se3/WSe2 heterostructures for ultrahigh responsivity photodetector

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Abstract

Transition metal dichalcogenides (TMDCs) are promising candidates for future optoelectronic devices accounting for their high carrier mobility and excellent quantum efficiency. However, the limited light absorption efficiency in atomically thin layers significantly hinders photocarrier generation, thereby impairing the optoelectronic performance and hindering practical applications. Herein, we successfully synthesized In2Se3/WSe2 heterostructures through a typical two-step chemical vapor deposition (CVD) method. The In2Se3 nanosheet with strong light absorption capability, serving as the light absorption layer, was integrated with the monolayer WSe2, enhancing the photosensitivity of WSe2 significantly. Upon laser irradiation with a wavelength of 520 nm, the In2Se3/WSe2 heterostructure device shows an ultrahigh photoresponsivity with a value as high as 2333.5 A/W and a remarkable detectivity reaching up to 6.7 × 1012 Jones, which is the highest among almost the reported TMDCs-based heterostructures grown via CVD even some fabricated by mechanical exfoliation (ME). Combing the advantages of CVD method such as large scale, high yield, and clean interface, the In2Se3/WSe2 heterostructures would provide a novel path for future high-performance optoelectronic device.

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Acknowledgements

The authors would like to acknowledge the financial support from the following funding: the National Key R&D Program of China (No. 2022YFA1204300), the National Natural Science Foundation of China (Nos. 62104066, 52221001, 62090035, U19A2090, U22A20138 and 51902098), the Natural Science Foundation of Hunan Province (No. 2021JJ20016), the Science and Technology Innovation Program of Hunan Province (Nos. 2021RC3061 and 2020RC2028); the Key Program of Science and Technology Department of Hunan Province (Nos. 2019XK2001 and 2020XK2001), the Open Project Program of Wuhan National Laboratory for Optoelectronics (No. 2020WNLOKF016), the National Postdoctoral Program for Innovative Talents (No. BX2021094), and the Postdoctoral Science Foundation of China (No. 2020M680112).

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  1. Cheng Zhang and Biyuan Zheng contributed equally to this work.

Authors and Affiliations

  1. Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China

    Cheng Zhang, Biyuan Zheng, Guangcheng Wu, Xueying Liu, Jiaxin Wu, Chengdong Yao, Yizhe Wang, Zilan Tang, Ying Chen, Lizhen Fang, Luying Huang, Dong Li, Shengman Li & Anlian Pan

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  1. Cheng Zhang
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Correspondence to Dong Li, Shengman Li or Anlian Pan.

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Zhang, C., Zheng, B., Wu, G. et al. Controlled growth of vertically stacked In2Se3/WSe2 heterostructures for ultrahigh responsivity photodetector. Nano Res. 17, 1856–1863 (2024). https://doi.org/10.1007/s12274-023-6021-3

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