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Ferroelectric-gated ReS2 field-effect transistors for nonvolatile memory

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Abstract

Ferroelectric field-effect transistors (FeFET) with nondestructive readout capability have emerged as an attractive candidate for next-generation nonvolatile memory technology. Herein, we demonstrate ferroelectric-gated nonvolatile memory featuring a top gate architecture by combining multi-layer ReS2 with ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer films. The ReS2 FeFET using hBN as substrate shows a large memory window of ∼ 30 V. Repeated write/erase operations are successfully performed by applying pulse voltage of ±25 V with 1 ms width to the ferroelectric P(VDF-TrFE), and an ultra-high write/erase ratio of ∼ 107 can be achieved. Furthermore, the ReS2 FeFET shows stable data retention capability of longer than 2,000 s and reliable endurance of greater than 2,000 cycles. These characteristics highlight that such ferroelectric-gated nonvolatile memory has great potential in future non-volatile memory applications.

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Acknowledgements

This work was supported by the National Key Research & Development Projects of China (Nos. 2016YFA0202300 and 2018FYA0305800), National Natural Science Foundation of China (Nos. 61888102 and 51772087), Strategic Priority Research Program of Chinese Academy of Sciences (CAS, No. XDB30000000), Youth Innovation Promotion Association of CAS (No. Y201902), and CAS Project for Young Scientists in Basic Research (No. YSBR-003).

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Authors and Affiliations

  1. Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China

    Li Liu, Qilong Wu, Yuan Tian & Zhihui Qin

  2. Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China

    Li Liu, Hao Wang, Kang Wu, Haitao Yang, Cheng Min Shen, Lihong Bao & Hong-Jun Gao

  3. Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China

    Cheng Min Shen, Lihong Bao & Hong-Jun Gao

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  1. Li Liu
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  2. Hao Wang
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  3. Qilong Wu
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  4. Kang Wu
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  5. Yuan Tian
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  7. Cheng Min Shen
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  8. Lihong Bao
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  9. Zhihui Qin
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  10. Hong-Jun Gao
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Correspondence to Lihong Bao or Zhihui Qin.

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Liu, L., Wang, H., Wu, Q. et al. Ferroelectric-gated ReS2 field-effect transistors for nonvolatile memory. Nano Res. 15, 5443–5449 (2022). https://doi.org/10.1007/s12274-022-4142-8

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  • DOI: https://doi.org/10.1007/s12274-022-4142-8

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