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Interlayer coupling in anisotropic/isotropic van der Waals heterostructures of ReS2 and MoS2 monolayers

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Abstract

In-plane symmetry is an important contributor to the physical properties of two-dimensional layered materials, as well as atomically thin heterojunctions. Here, we demonstrate anisotropic/isotropic van der Waals (vdW) heterostructures of ReS2 and MoS2 monolayers, where interlayer coupling interactions and charge separation were observed by in situ Raman-photoluminescence spectroscopy, electrical, and photoelectrical measurements. We believe that these results could be helpful for understanding the fundamental physics of atomically thin vdW heterostructures and creating novel electronic and optoelectronic devices.

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Authors and Affiliations

  1. College of Chemistry and Materials Engineering, Wenzhou University, Zhejiang Key Laboratory of Carbon Materials, Wenzhou, 325035, China

    Mei Zhao, Wenting Zhang, Manman Liu, Chao Zou, Keqin Yang, Yun Yang, Youqing Dong, Lijie Zhang & Shaoming Huang

  2. Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, School of Physical Sciences, University of Science and Technology of China, Hefei, 230026, China

    Wenting Zhang

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  1. Mei Zhao
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  2. Wenting Zhang
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  3. Manman Liu
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  4. Chao Zou
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  5. Keqin Yang
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  6. Yun Yang
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  7. Youqing Dong
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  8. Lijie Zhang
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  9. Shaoming Huang
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Correspondence to Lijie Zhang or Shaoming Huang.

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These authors contributed equally to this work.

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Zhao, M., Zhang, W., Liu, M. et al. Interlayer coupling in anisotropic/isotropic van der Waals heterostructures of ReS2 and MoS2 monolayers. Nano Res. 9, 3772–3780 (2016). https://doi.org/10.1007/s12274-016-1247-y

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