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Optimization of organic light emitting diode for HAT-CN based nano-structured device by study of injection characteristics at anode/organic interface

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Abstract

To increase the current density of the hole only device, 1, 4, 5, 8, 9, 11-hexaazatriphenylene-hexacarbonitrile (HAT-CN) material has been inserted in the device at the indium tin oxide (ITO)/organic interface. Since HAT-CN molecule can withdraw electrons, it can alter electronic properties of the electrodes and hence inserted between the organic/metal interfaces. This paper deals with the optimization of the thickness of organic-metal layers to enhance the efficiency. Also, efforts have been made to increase the current density and reduce the operating voltage of the device. The material 2, 7-bis [N, N-bis (4-methoxy-phenyl) amino]-9, 9-spirobifluorene (Meo-Spiro-TPD) is used to simulate the hole only device because it is a thermally stable hole transport material. Simulated results shows that better current density values can be achieved compared to fabricated one by optimizing the organic metal layer thickness. The best optimized layer thickness of 22 nm for Alq3, 25 nm for CBP* doped with Ir(ppy)3, 9 nm for Meo-Spiro TPD and 4 nm for HAT-CN which results in current density of 0.12 A/cm2 with a reduction in operating voltage by approximately 2 V.

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Acknowledgements

Authors wish to express their gratitude to Amity University, Noida for supporting this simulation work.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Amity University UP, Noida, India

    Neha Jain

  2. Amity Institute of Nanotechnology, Amity University UP, Noida, India

    O. P. Sinha

  3. Department of Electronics and Telecom Engineering, Amity University UP, Noida, India

    Sujata Pandey

Authors
  1. Neha Jain
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  2. O. P. Sinha
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  3. Sujata Pandey
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Corresponding author

Correspondence to Sujata Pandey.

Additional information

Neha Jain received her M.Tech degree from Kurukshetra University, Kurukshetra in 2012. Now, she is a PhD candidate in Amity University, Noida in Department of Electronics and communication engineering under Amity School ofEngineering and Technology. Her main research is focussed on theoretical simulation and fabrication of nano-structured devices for the electrical and optical properties and optoelectronic applications.

Prof. O. P. Sinha received his B.Sc. Hons and M.Sc. degrees in Physics from Magadh University, Bodh-Gaya in 1991 and 1993 respectively. He has done his PhD from Banaras Hindu University, Varanasi in 2001. He is working as Professor and Dy. Director in Amity Institute Of Nano-Technology, Amity University, Uttar Pradesh, Noida, India. He worked as Post Doctoral Researcher at Advanced Surface Technology Research Laboratory (ASTRaL) Lappeenranta University of Technology; Mikkeli, Finland and Guest scientist at Institute of Ion Beam Physics and Materials Research,Forschungszentrum Dresden-Rossendorf, Dresden, Germanyin 2009. He was a Marie Curie Fellow (Senior Visiting Research Fellow) at Centre for Nanometer-scale Science and Advanced Materials (NANOSAM), Department of Physics of Nanostructures and Nanotechnology, Institute of Physics, Jagiellonian University, Krakow, Poland in 2007–2008. His main research work is on semiconductor nanostructures, 2D nano-materials for optoelectronic applications.

Prof. Sujata Pandey received her Master’s degree in Electronics (VLSI) and Ph.D. degree in Electronics from University of Delhi. Presently she is working as Professor at Amity University Uttar Pradesh. She has over 200 research publications in reputed international journals/conferences. Her areas of research are microelectronics, analog/digital VLSI design, and energy harvesting. She is member of IEEE, USA, member of Electron Device Society, IET UK, founder member of VLSI and Semi-conductor Society of India, ISTE and life member of Indian Science Congress.

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Jain, N., Sinha, O.P. & Pandey, S. Optimization of organic light emitting diode for HAT-CN based nano-structured device by study of injection characteristics at anode/organic interface. Front. Optoelectron. 12, 268–275 (2019). https://doi.org/10.1007/s12200-019-0848-y

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  • DOI: https://doi.org/10.1007/s12200-019-0848-y

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