Abstract
A thermal vacuum evaporation system has been used to deposit zinc telluride (ZnTe) thin film on glass substrate in order to investigate the structural, morphological, optoelectronic and electrical properties of the deposited film. The deposited film has been characterised by X-ray diffraction (XRD), atomic force microscopy (AFM), and UV-VIS-NIR spectrophotometer. The polycrystalline and cubic structure of the sample has been confirmed by XRD. The order parameter(s), which determines the crystallinity and good environmental stability of the sample, has been obtained for the peak (1 1 1) to peak (2 0 0) and is found to be 0.83. The XRD patterns and Bragg’s law have been examined to determine the microstructural parameters (lattice parameter, inter-planar spacing, crystallite size, number of crystallites per unit area, strain, dislocation density) of the investigated film. Optical properties (transmittance, absorbance, refractive index, absorption coefficient, extinction coefficient, optical density) of ZnTe thin film were extensively studied in incident photon energy range of 0.5–3.5 eV, where direct optical transition has been obtained with a band gap of 2.63 eV. The surface morphology of the evaporated ZnTe thin film has been checked by AFM.
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References
Swank R K 1967 Phys. Rev. 153: 844
Bhargava R 1995 Properties of wide band gap II–VI semiconductors (Institution of Engineering & Technology)
Rohatgi A, Ringel S A, Sudharsanan R, Meyers P V, Liu C H and Ramanathan V 1989 Solar Cells 27: 219
Tanaka T et al 2010 J. Appl. Phys. 108: 502
Feng X, Singh K, Bhavanam S, Palekis V, Morel D L and Ferekides C S 2012 38th IEEE Photovoltaic Specialists Conference (PVSC)
Gessert T A et al 2013 Thin Solid Films 535:237
Guo Q et al 2007 Solid State Commun. 141: 188
Padiyan D P, Marikani A and Murali K R 2003 Mater. Chem. Phys. 78: 51
Glew R W 1977 Thin Solid Films 46: 59
Kissinger N J S, Jayachandran M, Perumal K and Raja C S 2007 Bull. Mater. Sci. 305: 47
Gopakumar N, Anjana P S and Vidyadharan Pillai P K 2010 J. Mater. Sci. 45: 6653
Baron T, Saminadayar K and Magnea N 1998 J. Appl. Phys. 83: 1354
Melo O D, Larramendi E M, Duart J M M, Velez M H, Stangl J and Sitter H 2007 J. Cryst. Growth 307: 253
Erlacher A et al 2005 Appl. Surf. Sci. 248: 402
Seyam M A M 2012 J. Alloys Compounds 541: 448
Christen H M and Eres G 2008 J. Phys.: Condens. Matter 20: 264005
Bellakhder H, Outzourhit A and Ameziane E L 2001 Thin Solid Films 382: 30
Ibrahim A A, El-Sayed N Z, Kaid M A and Ashour A 2004 Vacuum 75: 189
Kazmerski L L, Ayyagani M S, White F F and Sanborn G A 1976 J. Vacc. Sci. Technol. 13: 139
Ahamed J U, Sanbongi T, Katano S and Uehara Y 2010 Jpn J. Appl. Phys. 49: 08LB09
Yang T R and Lu C C 2000 Physics B 284: 1187
Ahamed J U, Katano S and Uehara Y 2016 Trans. Ind. Inst. Met. 69: 1579
Alam A J and Cameron D C 2000 Thin Solid Films 377–378: 455
Kumar B R, Hymavathi B and Rao T S 2014 Chalcogenide Lett. 11: 509
El-Kadry N, Ashour A and Mahmoud S A 1995 Thin Solid Films 269: 112
Mahalingam T, John V S, Ravi G and Sebastian P J 2002 Cryst. Res. Technol. 373: 29
Farrow R F C, Weller D, Marks R F, Toney M F, Cebollada A and Harp G R 1996 J. Appl. Phys. 79: 5967
Yang B, Asta M, Mryasov O N, Klemmer T J and Chantrell R W 2006 Acta Mater. 54: 4201
Culity B D 1956 Elements of X-ray diffraction, second edition, pp. 126–143
Potlog T, Maticiuc N, Mirzac A, Dumitriu P and Scortescu D 2012 IEEE Trans. Semicon. 2: 321
Swanepoel R 1983 J. Phys. E: Sci. Instrum. 16: 12
Mahmood W, Shah N A, Akram S, Mehboob U, Malik U S and Sharaf M U 2013 Chalcogenide Lett. 10: 273
Ishizaki T, Ohtomo T and Fuwa A 2004 J. Phys. D: Appl. Phys. 37: 255
Farooq M U, Khan M, Faraz A, Maqsood A, Ahmad W and Li L 2014 Maters. Tech.: Adv. Perform. Maters. 29: 29
Pattar J, Sawant S N, Nagaraja M, Shashank N, Balakrishna K M, Sanjeev G and Mahesh H M 2009 Int. J. Electrochem. Sci. 4: 369
Jeetendra S, Nagabhushana H, Mrudula K, Naveen C S, Raghu P and Mahesh H M 2014 Int. J. Electrochem. Sci. 9: 2944
John V S, Mahalingam T and Chu J P 2005 Solid-State Electron. 49: 3
Acknowledgements
Part of this work was carried out in the Materials Science Division, Atomic Energy Center, Dhaka, Bangladesh. The authors are grateful to the concerned authority and laboratory staff of Bangladesh Council of Scientific and Industrial Research (BCSIR) and Bangladesh University of Engineering and Technology (BUET) for their support, cooperation and technical assistance in experimental measurements.
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Ahamed, J.U., Begum, N.P. & Khan, M.N.I. Property elucidation of vacuum-evaporated zinc telluride thin film towards optoelectronic devices. Sādhanā 42, 1773–1781 (2017). https://doi.org/10.1007/s12046-017-0717-6
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DOI: https://doi.org/10.1007/s12046-017-0717-6