Abstract
In this work, the sound velocity and some of the mechanical, optical and optical phonon frequencies of the semiconductor β-GaN have been studied. The proposed temperature dependency of the pseudopotential form factors was used together with the empirical pseudopotential technique (EPM). The precise form factors for each temperature are computed using the suggested model. Calculations have been done to determine the temperature-dependent values of the energy gaps, sound velocity, refractive index, elastic constants, mechanical moduli, phonon frequencies and dielectric constants. The findings and the published and experimental data in the literature are in good agreement. These findings can be used as a guide for physical parameter values that are difficult to quantify experimentally.
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23 June 2023
A Correction to this paper has been published: https://doi.org/10.1007/s12043-023-02563-8
References
S Adachi, Cubic gallium nitride (-GaN) (Springer, 1999) p. 188
H Okumura, S Yoshida and T Okahisa, Appl. Phys. Lett. 64, 2997 (1994)
O Brandt, H Yang, B Jenichen, Y Suzuki, L D Weritz and K H Ploog, Phys. Rev. B 52, R2253 (1995)
M J Paisley, Z Sitar, J B Posthill and R F Davis, J. Vac. Sci. Technol. A 7, 701 (1989)
S V Novikov, N M Stanton, R P Campion, R D Morris, H L Geen, C T Foxon and A J Kent, Semicond. Sci. Technol. 23, 15018 (2007)
N Bouarissa, Mater. Chem. Phys. 73, 51 (2002)
D Fritsch, H Schmidt and M Grundmann, Phys. Rev. B 67, 235205 (2003)
E B Elkenany, Silicon 8, 391 (2016)
A Mills, III-Vs Rev. 18, 28 (2005)
A K Jain, S Yadav, M Mehra, S Sapra and M Singh, MRS Adv. 4, 567 (2019)
P Harrison, Quantum wells, wires and dots (Wiley Online Library, 2016)
A R Degheidy, E B Elkenany and O A Alfrnwani, Comput. Condens. Matter 16, e00300 (2018)
A R Degheidy and E B Elkenany, Mater. Chem. Phys. 143, 1 (2013)
P Başer and S Elagoz, Superlatt. Microstruct. 102, 173 (2017)
W Wang, L Xu, X Wei, S Zhang and Z Yao, J. Appl. Phys. 127, 195903 (2020)
L Ghalouci, F Taibi, F Ghalouci and M O Bensaid, Comput. Mater. Sci. 124, 62 (2016)
A R Degheidy and E B Elkenany, Mater. Chem. Phys. 157, 108 (2015)
A R Degheidy, E B Elkenany and O A Alfrnwani, Comput. Condens. Matter 16, e00310 (2018)
A R Degheidy and E B Elkenany, Thin Solid Films 539, 365 (2013)
A R Degheidy, E B Elkenany and O A Alfrnwani, Comput. Condens. Matter 15, 55 (2018)
A R Degheidy and E B Elkenany, Semiconductors 45, 1251 (2011)
A R Degheidy and E B Elkenany, Chin. Phys. B 24, 94302 (2015)
T S Moss, Phys. Status Solidi 131, 415 (1985)
V P Gupta and N M Ravindra, Phys. Status Solidi 100, 715 (1980)
P Herve and L K J Vandamme, Infrared Phys. Technol. 35, 609 (1994)
G A Samara, Phys. Rev. B 27, 3494 (1983)
I Vurgaftman, J R Meyer and L R Ram-Mohan, J. Appl. Phys. 89, 5815 (2001)
H Baaziz, Z Charifi and N Bouarissa, Mater. Chem. Phys. 68, 197 (2001)
S Y Davydov and S K Tikhonov, Semiconductors 32, 947 (1998)
C Kittel, P McEuen and P McEuen, Introduction to solid state physics (Wiley, New York, 1976)
N Bouarissa, Mater. Chem. Phys. 100, 41 (2006)
J M Baranowski, J. Phys. C 17, 6287 (1984)
S-G Shen, J. Phys. Condens. Matter 6, 8733 (1994)
S Adachi, Properties of group–IV, III–V and II–VI semiconductors (John Wiley & Sons, 2005)
A R Degheidy, E B Elkenany, M A K Madkour and A M AbuAli, Comput. Condens. Matter 16, e00308 (2018)
Y P Varshni, Physica 34, 149 (1967)
E Ejder, Phys. Status Solidi 6, 445 (1971)
M Levinshtein, S Rumyantsev and M Shur, Properties of advanced semiconductor materials: GaN, AlN, InN, BN, SiC, SiGe (Wiley, New York, 2001)
K Kim, W R L Lambrecht and B Segall, Phys. Rev. B 50, 1502 (1994)
J Zi, X Wan, G Wei, K Zhang and X Xie, J. Phys. Condens. Matter 8, 6323 (1996)
A R Degheidy, A M AbuAli and E B Elkenany, Appl. Phys. A 127, 1 (2021)
S F Pugh, London, Edinburgh, Dublin Philos. Mag. J. Sci. 45, 823 (1954)
Acknowledgements
Thanks are due to Prof. Dr Mohammed Sallah, Physics Department, Faculty of Science, Mansoura university for helping in writing, editing and revising the paper. The second author has done his contribution in this work under the NANOSOLARCELLS project and he would like to appreciate the support of Academy of Scientific Research and Technology for being a member of LEAP-RE consortium and support the project NANOSOLARCELLS entitled “Integration of photonic conversion layers based on photoemissive nanostructured materials for improving sunlight harvesting ability of solar cells”. NANOSOLARCELLS is part of LEAP-RE program, which received funding from European Union’s Horizon 2020 Research and Innovation Program under grant agreement 963530.
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Abuali, A.M., Elkenany, E.B. Investigation of thermal dependence of phonon frequencies, sound velocity, mechanical and optical characteristics of the β-GaN semiconductor compound. Pramana - J Phys 97, 60 (2023). https://doi.org/10.1007/s12043-023-02528-x
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DOI: https://doi.org/10.1007/s12043-023-02528-x