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Strain-induced structural and electronic phase transitions in ZrSe2: high pressure X-ray diffraction and Raman studies

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Abstract

ZrSe2 exhibits a pressure-induced gradual structural phase transition from hexagonal 1T phase to a monoclinic phase, which starts around 5.9 GPa and completes around 14.8 GPa. Anomalies found in high pressure Raman measurements indicate the presence of a possible electronic phase transition mediated by the differential strain produced inside the sample.

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Acknowledgements

We gratefully acknowledge the Ministry of Earth Sciences (MoES) and Department of Science and Technology (DST), Government of India, for the financial support. B Ghosh also gratefully acknowledges the kind support from the beam line scientists, associated with EXPRESS beam line at ELETTRA synchrotron, Italy.

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Authors and Affiliations

  1. National Center for High Pressure Studies, Department of Physical Science, Indian Institute of Science Education and Research Kolkata, Nadia, 741246, India

    Bishnupada Ghosh, Mrinmay Sahu, Debabrata Samanta & Goutam Dev Mukherjee

Authors
  1. Bishnupada Ghosh
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  2. Mrinmay Sahu
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  3. Debabrata Samanta
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  4. Goutam Dev Mukherjee
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Corresponding author

Correspondence to Bishnupada Ghosh.

Additional information

This article is part of the Special issue on ‘High pressure materials science: recent trends’.

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Ghosh, B., Sahu, M., Samanta, D. et al. Strain-induced structural and electronic phase transitions in ZrSe2: high pressure X-ray diffraction and Raman studies. Bull Mater Sci 45, 221 (2022). https://doi.org/10.1007/s12034-022-02821-2

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  • DOI: https://doi.org/10.1007/s12034-022-02821-2

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