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Interplay of the influence of oxygen partial pressure and rf power on the properties of rf-magnetron-sputtered AZO thin films

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Abstract

The complex interplay between the influence of oxygen partial pressure and that of rf power on the structural, electrical and optical properties of rf-magnetron-sputtered aluminium-doped zinc oxide, AZO, thin films is illustrated. The dependence of film electrical resistance and interplanar spacing of film crystallites on rf power seems to be different at higher oxygen partial pressure values than at lower ones. Film preparation was performed at room temperature (without extra heating) and low pressure p \(=\) 0.5 mTorr, varying the rf power density between P \(=\) 0.57 and 2.83 W \(\hbox {cm}^{-2}\) at different relative oxygen partial pressure values. An explanation of film properties has been sought in terms of changes in the chemical properties of the films due to the bombardment of the films during film formation with negative oxygen ions.

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Authors and Affiliations

  1. Atomic Energy Commission of Syria, P.O. Box 6091, Damascus, Syria

    A Kassis, M Saad & F Nounou

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  1. A Kassis
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  2. M Saad
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  3. F Nounou
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Correspondence to A Kassis.

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Kassis, A., Saad, M. & Nounou, F. Interplay of the influence of oxygen partial pressure and rf power on the properties of rf-magnetron-sputtered AZO thin films. Bull Mater Sci 40, 791–797 (2017). https://doi.org/10.1007/s12034-017-1404-2

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  • DOI: https://doi.org/10.1007/s12034-017-1404-2

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