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Anisotropic Grain Growth of Al-Si Wire Under Electromigration Tests in Power Devices

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Abstract

The microstructure evolution of Al-1 wt% Si alloy wires with a diameter of 50.8 μm bonded on Cu metallization was investigated under electromigration (EM) tests with a current density of 7 × 104 A/cm2 at an ambient temperature of 150 °C. After the EM tests, microstructure of the wire evolved from submicron slender grains into bamboo-type grains with diameters 100 times larger than the original ones because of anisotropic grain growth (AGG) in the radial direction of wire. The orientations of grains also changed from highly [111] oriented into random distribution. In addition, bamboo nodes created by distortion of bamboo-type grains were found near cathodes while protrusions were observed near anodes of the wire. The mechanisms of AGG as well as the orientation change are proposed and delineated in this study.

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Acknowledgements

The authors appreciate the funding support given by National Science and Technology Council (NSTC) in Taiwan under Contract No. 111-2628-E-007-013 -MY3 and equipment support from Instrumentation Center at National Tsing Hua University (NTHU) for their JEOL JSM-7610F field emission scanning electron microscope analysis.

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  1. Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan

    Yan-Wen Tsau & Fan-Yi Ouyang

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  1. Yan-Wen Tsau
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Contributions

Conceptualization, F-YO; Data curation, Y-WT; Funding acquisition, F-YO; Investigation, Y-WT; Methodology, Y-WT; Supervision, F-YO; Writing original draft, Y-WT; Writing-review & editing, F-YO.

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Correspondence to Fan-Yi Ouyang.

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Tsau, YW., Ouyang, FY. Anisotropic Grain Growth of Al-Si Wire Under Electromigration Tests in Power Devices. JOM 75, 3807–3815 (2023). https://doi.org/10.1007/s11837-023-05965-6

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