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High-Performance Field-Effect Transistor Fabricated on CVD-Grown MoS2 Monolayers with Indium Contacts

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Abstract

Molybdenum disulfide (MoS2), an emerging two-dimensional semiconductor material, has been keenly studied for field-effect transistors (FETs). In this work, we explored the optical and electrical properties of FETs fabricated by MoS2 flakes grown by chemical vapor deposition (CVD) and transferred to the electrodes through propylene carbonate film. Large-area, high-quality and highly crystalline MoS2 monolayers up to 58 µm are obtained through CVD. Flakes are characterized by optical microscopy, atomic force microscopy, Raman spectroscopy, and photoluminescence analysis. The back-gated measurements are performed in ambient conditions without any encapsulation of the device. The fabricated device reveals n-type behavior with high field-effect mobility of 32 cm2/V s and high current ON/OFF ratio of 106. Good ohmic contact is achieved while using indium as source/drain electrodes. The large sized, highly crystalline flakes of MoS2 and the fabricated device showing high field-effect mobility and ON/OFF ratio make them potential candidates for high-performance nanoelectronics and optoelectronics devices.

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Authors and Affiliations

  1. Department of Physics, COMSATS University Islamabad, Lahore Campus, Defence Road, Lahore, 54000, Pakistan

    Hina Mustafa, Jahangir Khan, Abdul Sattar & Muhammad Irfan

  2. Department of Chemistry, Islamia College University, Peshawar, Pakistan

    Sania Gul

  3. Department of Optical Engineering, Sejong University, Seoul, 30000, South Korea

    Irsa Zalfiqar

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  1. Hina Mustafa
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  2. Jahangir Khan
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  3. Abdul Sattar
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  4. Muhammad Irfan
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  5. Sania Gul
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  6. Irsa Zalfiqar
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Correspondence to Abdul Sattar.

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Mustafa, H., Khan, J., Sattar, A. et al. High-Performance Field-Effect Transistor Fabricated on CVD-Grown MoS2 Monolayers with Indium Contacts. J. Electron. Mater. 52, 7157–7163 (2023). https://doi.org/10.1007/s11664-023-10625-1

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