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Thermal Analysis of Gallium Oxide-Based Field-Effect Transistors on Different Substrates

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Abstract

In this paper, a compact model is presented for the calculation of thermal resistance of gallium oxide-based field-effect transistors (FETs). A gallium oxide epilayer with different substrates of gallium oxide, silicon carbide (SiC), silicon and sapphire is considered for the modeling. Thermal resistance is realized with different epilayer, substrate and gate width thickness. The model is compared and verified on the COMSOL simulation platform with different parametric variations. The model compares favorably with simulation counterparts, with very close agreement (2–3%). Furthermore, channel temperature is also calculated using analytical modeling which helps power device engineers to design the product accordingly. The paper also presents a comparative analysis of the gallium oxide epilayer with different substrates (sapphire, silicon, siC and gallium oxide) to reduce the self-heating effects, which will improve device performance. The gallium oxide epilayer with a SiC substrate-based device shows the best performance in terms of lower thermal resistance and channel temperature. This may help to explore a wide array of possibilities for reducing problems with the thermal characteristics of gallium oxide devices. The analytical modeling presented here helps elucidate the thermal properties of gallium oxide-based devices from both a simulation and fabrication point of view.

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Acknowledgments

The authors would like to thanks CSIR, India for providing financial support under CSIR SRF-Direct Scheme (Grant no. 31/0007(11993)/2021-EMR-I). The authors are grateful to the director of CSIR-CEERI, Pilani for guidance and directions.

Funding

The presented work is supported by CSIR-India Direct-SRF scheme.

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Authors and Affiliations

  1. CSIR - Central Electronics Engineering Research Institute, Pilani, Rajasthan, India

    Pharyanshu Kachhawa, Vaishali Chaudhary & Nidhi Chaturvedi

  2. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, Uttar Pradesh, India

    Pharyanshu Kachhawa & Nidhi Chaturvedi

  3. Bansathali Vidyapith, Bansathali, Rajasthan, India

    Vaishali Chaudhary

Authors
  1. Pharyanshu Kachhawa
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  2. Vaishali Chaudhary
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  3. Nidhi Chaturvedi
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Contributions

All authors contributed to the study conception and design. Material preparation, Design and simulation data collection and analysis were performed by Pharyanshu Kachhawa and Vaishali Chaudhary. The first draft of the manuscript was written by Pharyanshu Kachhawa. The conceptualization protocols, project monitoring and validation were done by Nidhi Chaturvedi. All authors read and approved the final manuscript.

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Correspondence to Pharyanshu Kachhawa.

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Kachhawa, P., Chaudhary, V. & Chaturvedi, N. Thermal Analysis of Gallium Oxide-Based Field-Effect Transistors on Different Substrates. J. Electron. Mater. 51, 6379–6387 (2022). https://doi.org/10.1007/s11664-022-09871-6

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  • DOI: https://doi.org/10.1007/s11664-022-09871-6

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