Abstract
This paper studies the effects on the performance of silicon-based and germanium-based ISFET by varying the device parameters. The ENBIOS-2D Lab of nanoHUB has been used for simulation. Parameters like temperature, channel length, and gate oxide thickness are varied. These parameters are varied to study I-V transfer characteristic curves of Si-based and Ge-based devices, effect on potential along x-direction as well as z-direction and carrier concentration. Variation of device temperature from 273.15 to 323.15 K shows there is a direct relation of drain current with the device temperature. Si-based devices show 107% current increase and Ge-based devices show 13.65% current increase when temperature increases from 273.15 to 323.15 K at 0.5 V gate voltage. Comparing the results of Si-based devices at different temperatures of 273.15 and 323.15 K, the carrier concentration increases massively by about 53 times at the bottom center of the channel with this increase in temperature, while potential at this point is unaffected. The length of the ISFET channel is varied from 200 to 1000 nm and the thickness of gate oxide from 3 to 15 nm. An increase in the potential of 174% along z-direction is observed at the bottom center of the channel when gate oxide thickness increases from 3 to 15 nm. Simulations of all these parameters show an inverse relation of drain current with channel length as well as gate oxide thickness. After analyzing the results, the effects on each parameter and the magnitude of these effects were identified based on the material used in the ISFET device.
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Thakarar, K. et al. (2022). Performative Analysis on Ion-Sensitive Field-Effect Transistor by Varying Intrinsic Parameter. In: Mahajan, V., Chowdhury, A., Padhy, N.P., Lezama, F. (eds) Sustainable Technology and Advanced Computing in Electrical Engineering . Lecture Notes in Electrical Engineering, vol 939. Springer, Singapore. https://doi.org/10.1007/978-981-19-4364-5_46
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DOI: https://doi.org/10.1007/978-981-19-4364-5_46
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