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Ultraviolet Light Detection Properties of ZnO/AlN/Si Heterojunction Diodes

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Abstract

High-quality n-ZnO/AlN/p-Si and n-ZnO/p-Si heterojunction diodes were successfully fabricated by RF sputtering deposition technique. XRD, SEM, and EDX measurements confirm the excellent structural and surface morphological attributes of the grown ZnO thin films. I−V measurements were performed and a good rectification ratio of ~ 319 was found for both the diodes. The contrast ratio, being the ratio of current in the UV illumination condition to the current in dark condition, had higher values of ~ 14 for the n-ZnO/p-Si UV detector and ~ 20 for the n-ZnO/AlN/p-Si UV detector at − 5 V. Enhanced performance of the UV detector n-ZnO/p-Si diode due to the use of a buffer layer of aluminum nitride (AlN) between the ZnO and Si, has been found, thus establishing AlN as the material of choice as a buffer layer to improve the UV detection in ZnO/Si-based devices.

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Acknowledgments

Manipal University Jaipur, Rajasthan (Semiconductor Device Fabrication Lab) & MRC (Materials Research Centre), MNIT Jaipur, Rajasthan are acknowledged for the device growth & characterization facilities extended to the authors. The financial assistance under the Project Seed Grant No.- MUJ/REGR/1435/08 awarded by Manipal University Jaipur, Rajasthan is also acknowledged.

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  1. Department of Electronics & Communication Engineering, Manipal University Jaipur, Jaipur, Rajasthan, 303007, India

    Chandra Prakash Gupta, Amit Kumar Singh & Shilpi Birla

  2. Marwadi University, Rajkot, Gujarat, 360003, India

    Sandeep Sancheti

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Gupta, C.P., Singh, A.K., Birla, S. et al. Ultraviolet Light Detection Properties of ZnO/AlN/Si Heterojunction Diodes. J. Electron. Mater. 51, 1097–1105 (2022). https://doi.org/10.1007/s11664-021-09374-w

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