Abstract
Cu2ZnSn(S,Se)4 (CZTSSe) thin films have been grown by RF-magnetron sputtering from a quinary CZTSSe target without subsequent selenization or sulfuration. We investigated the compositions, surface morphology, and crystal structural and optical properties of the CZTSSe thin films. At a substrate temperature of 450°C, the CZTSSe thin films displayed nearly ideal stoichiometric compositions that contributed to their grain growth and crystalline quality. The x-ray diffraction results confirmed that the CZTSSe thin films exhibited a (112) plane preferred orientation with good crystalline quality. The bandgap energy was approximately 1.45 eV. This study determined the optimum substrate temperature to improve the performance of CZTSSe thin films.
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Guang-Xing Liang designed and conducted the project. Ping Fan conducted the experiments. The data analyses were performed by Jun Zhao and Guang-Xing Liang. This manuscript was written by Jun Zhao. Ju-Guang Hu, Zhuang-Hao Zheng, Jing-Ting Luo, Dong-Ping Zhang and Yang Zeng participated in the discussion. All authors reviewed this manuscript.
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Zhao, J., Liang, GX., Hu, JG. et al. Substrate Temperature-Assisted Preparation of CZTSSe Thin Films by a Single Quinary Target. J. Electron. Mater. 47, 873–878 (2018). https://doi.org/10.1007/s11664-017-5881-2
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DOI: https://doi.org/10.1007/s11664-017-5881-2