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Electrical Properties of Dilute Nitride GaAsPN/GaPN MQW p–i–n Diode

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Abstract

In this study, the electrical properties of dilute nitride GaAsPN/GaPN multi-quantum well p–i–n diodes were investigated by using current–voltage (I–V) measurements at room temperature. The diode structure was grown on silicon (Si) (100) substrate misoriented by 4° towards the [110] direction using the molecular beam epitaxy technique, and ohmic contacts were formed on this structure by metallization process. The forward bias I–V characteristics of the diode were analyzed by the thermionic emission theory. Ideality factor (n), barrier height (Φb) and series resistance (R s), which are the main electrical parameters of diodes, were determined from I–V characteristic, Norde and Cheung methods. The obtained experimental results were compared with each other. From the I–V characteristic, the values of n and Φb were found to be 2.86 eV and 0.69 eV, respectively. The barrier height values, which were obtained from the Norde function and I–V characteristic, were in good agreement with each other. It was also found that the values of series resistance determined from the Norde and Cheung functions were compatible with each other.

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Acknowledgements

This work was supported by The Scientific and Technological Research Council of Turkey (TUBITAK) under Project Number 114F224. Also, this work was supported by the Republic of Turkey Ministry of Development under Project Numbers 2011K120290 and 2016K121220.

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Authors and Affiliations

  1. Department of Advanced Technologies, Graduate School of Natural and Applied Sciences, Gazi University, 06500, Teknikokullar, Ankara, Turkey

    T. Sertel

  2. Department of Physics, Faculty of Science, Gazi University, Teknikokullar, Ankara, Turkey

    A. Tataroglu, T. Asar, S. S. Cetin & S. Ozcelik

  3. Photonics Application and Research Center, Gazi University, 06500, Teknikokullar, Ankara, Turkey

    T. Sertel, Y. Ozen, A. Tataroglu, T. Asar, S. S. Cetin & S. Ozcelik

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  1. T. Sertel
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Sertel, T., Ozen, Y., Tataroglu, A. et al. Electrical Properties of Dilute Nitride GaAsPN/GaPN MQW p–i–n Diode. J. Electron. Mater. 46, 4590–4595 (2017). https://doi.org/10.1007/s11664-017-5460-6

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  • DOI: https://doi.org/10.1007/s11664-017-5460-6

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