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Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications

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Abstract

In the past several decades, the density and performance of transistors in a single chip have been increasing based on Moore’s Law. However, the slowdown of feature size reduction and memory wall in the von Neumann architecture restrict the improvement of system performance and energy efficiency. Thus the requirements of the emerging big data and artificial intelligence applications cannot be met. To address this issue, novel devices and architectures are being explored. Among them, the InGaZnO (IGZO) field-effect transistor (FET) device and the computing-in-memory (CIM) architecture can be possible solutions for high-density, high-performance, and high-efficiency applications. Herein, we review the recent progress in IGZO-based FETs for dynamic random access memory (DRAM) applications. The mechanism of IGZO FETs, compact modeling of IGZO transistors, progress of IGZO manufacturing process, IGZO circuit design, and IGZO-based CIM and 3D integration architectures are presented. Furthermore, the challenges and future trends of IGZO research are discussed.

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Acknowledgements

This work was supported in part by National Key R&D Program (Grant No. 2018YFA0208503), National Natural Science Foundation of China (Grant Nos. 92264204, 61890944), and China Postdoctoral Science Foundation (Grant No. 2021M703444).

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Authors and Affiliations

  1. Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, 100029, China

    Shengzhe Yan, Zhaori Cong, Nianduan Lu, Jinshan Yue & Qing Luo

  2. University of Chinese Academy of Sciences, Beijing, 100049, China

    Shengzhe Yan & Zhaori Cong

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  1. Shengzhe Yan
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  2. Zhaori Cong
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Correspondence to Jinshan Yue.

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Yan, S., Cong, Z., Lu, N. et al. Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications. Sci. China Inf. Sci. 66, 200404 (2023). https://doi.org/10.1007/s11432-023-3802-8

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