Abstract
InGaN/GaN multiple quantum-well (MQW) structures with a wavelength range of green were successfully grown on a c-plane GaN template with SiO2 stripe patterns along the [11-20] and [1-100] directions as a mask. The surface morphologies of both samples were investigated using scanning electron microscopy and demonstrated anisotropic growth characteristics of GaN. The optical characteristics were investigated using Raman spectra and photoluminescence (PL). The InGaN/GaN MQW structure grown on the GaN template with SiO2 stripes along the [1-100] orientation exhibited less stress and higher PL intensity. Transmission electron microscopy results indicated that portions of MQWs were grown on an inclined semipolar plane, and air voids occurred only when the direction of the mask stripe was along the [1-100] orientation. The enhancement of the optical characteristic was due to the air-void structure and inclined semipolar quantum-well sidewalls.
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This work was supported by the Key Research and Development Program in Shaanxi Province (Grant Nos. 2018ZDCXL-GY-01-02-02 and 2018ZDCXL-GY-01-07), Wuhu and Xidian University Special Fund for Industry University Research Cooperation (Grant No. XWYCXY-012020007), the National Natural Science Foundation of China (Grant No. 62074120), the Fundamental Research Funds for the Central Universities, and the Innovation Fund of Xidian University.
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Du, J., Xu, S., Peng, R. et al. Enhancement of optical characteristic of InGaN/GaN multiple quantum-well structures by self-growing air voids. Sci. China Technol. Sci. 64, 1583–1588 (2021). https://doi.org/10.1007/s11431-021-1868-7
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DOI: https://doi.org/10.1007/s11431-021-1868-7