Skip to main content
Log in

Enhancement of optical characteristic of InGaN/GaN multiple quantum-well structures by self-growing air voids

  • Article
  • Published:
Science China Technological Sciences Aims and scope Submit manuscript

Abstract

InGaN/GaN multiple quantum-well (MQW) structures with a wavelength range of green were successfully grown on a c-plane GaN template with SiO2 stripe patterns along the [11-20] and [1-100] directions as a mask. The surface morphologies of both samples were investigated using scanning electron microscopy and demonstrated anisotropic growth characteristics of GaN. The optical characteristics were investigated using Raman spectra and photoluminescence (PL). The InGaN/GaN MQW structure grown on the GaN template with SiO2 stripes along the [1-100] orientation exhibited less stress and higher PL intensity. Transmission electron microscopy results indicated that portions of MQWs were grown on an inclined semipolar plane, and air voids occurred only when the direction of the mask stripe was along the [1-100] orientation. The enhancement of the optical characteristic was due to the air-void structure and inclined semipolar quantum-well sidewalls.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. Ponce F A, Bour D P. Nitride-based semiconductors for blue and green light-emitting devices. Nature, 1997, 386: 351–359

    Article  Google Scholar 

  2. Gao Z Y, Li J J, Xue X W, et al. Different structural origins for different sized surface pits observed on a-plane GaN film. Sci China Tech Sci, 2016, 59: 156–161

    Article  Google Scholar 

  3. Zhao Y, Xu S, Feng L, et al. The yellow luminescence origin of N-polar GaN film grown by metal organic chemical vapor deposition. ECS J Solid State Sci Technol, 2020, 9: 056003

    Article  Google Scholar 

  4. Tian A, Hu L, Zhang L, et al. Design and growth of GaN-based blue and green laser diodes. Sci China Mater, 2020, 63: 1348–1363

    Article  Google Scholar 

  5. Nakamura S, Mukai T, Senoh M. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes. Appl Phys Lett, 1994, 64: 1687–1689

    Article  Google Scholar 

  6. Viswanath A K, Lee J I, Kim S T, et al. Growth of good quality InGaN multiple quantum wells by MOCVD. J Cryst Growth, 2004, 260: 322–326

    Article  Google Scholar 

  7. Ramaiah K S, Su Y K, Chang S J, et al. Studies of InGaN/GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition. Appl Phys Lett, 2004, 85: 401–403

    Article  Google Scholar 

  8. Narukawa Y, Ichikawa M, Sanga D, et al. White light emitting diodes with super-high luminous efficacy. J Phys D-Appl Phys, 2010, 43: 354002

    Article  Google Scholar 

  9. Park I K, Park S J. Green gap spectral range light-emitting diodes with self-assembled InGaN quantum dots formed by enhanced phase separation. Appl Phys Express, 2011, 4: 042102

    Article  Google Scholar 

  10. Funato M, Ueda M, Kawakami Y, et al. Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {11–22} GaN Bulk Substrates. Jpn J Appl Phys, 2006, 45: L659–L662

    Article  Google Scholar 

  11. Zhao G, Wang L, Li H, et al. Structural and optical properties of semipolar (11-22) InGaN/GaN green light-emitting diode structure. Appl Phys Lett, 2018, 112: 052105

    Article  Google Scholar 

  12. Hangleiter A, Hitzel F, Netzel C, et al. Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency. Phys Rev Lett, 2005, 95: 127402

    Article  Google Scholar 

  13. Lee K J, Kim S J, Kim J J, et al. Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers. Opt Express, 2014, 22: A1164

    Article  Google Scholar 

  14. Dai J J, Lin C F, Wang G M, et al. Enhanced the light extraction efficiency of an InGaN light emitting diodes with an embedded rhombus-like air-void structure. Appl Phys Express, 2010, 3: 071002

    Article  Google Scholar 

  15. Han S H, Lee D Y, Shim H W, et al. Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes. Appl Phys Lett, 2013, 102: 251123

    Article  Google Scholar 

  16. Chiu C H, Lin C C, Han H V, et al. High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks. Nanotechnology, 2012, 23: 045303

    Article  Google Scholar 

  17. Yang C C, Lin C F, Chen K T, et al. Direct-grown air-void structure in the InGaN light-emitting diodes. IEEE Electron Device Lett, 2012, 33: 1738–1740

    Article  Google Scholar 

  18. Morawiec S, Sarzala R P, Nakwaski W. A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation. Appl Phys A, 2013, 113: 801–809

    Article  Google Scholar 

  19. Wernicke T, Netzel C, Weyers M, et al. Semipolar GaN grown on m-plane sapphire using MOVPE. Phys Stat Sol(c), 2008, 5: 1815–1817

    Google Scholar 

  20. Shiojiri M, Chuo C C, Hsu J T, et al. Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers. J Appl Phys, 2006, 99: 073505

    Article  Google Scholar 

  21. Yang G F, Chen P, Wang M Y, et al. Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets. Physica E-Low-dimensional Syst NanoStruct, 2012, 45: 61–65

    Article  Google Scholar 

  22. Romanov A E, Baker T J, Nakamura S, et al. Strain-induced polarization in wurtzite III-nitride semipolar layers. J Appl Phys, 2006, 100: 023522

    Article  Google Scholar 

  23. Perlin P, Jauberthie-Carillon C, Itie J P, et al. Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure. Phys Rev B, 1992, 45: 83–89

    Article  Google Scholar 

  24. Hiramatsu K, Detchprohm T, Akasaki I. Relaxation mechanism of thermal stresses in the heterostructure of GaN grown on sapphire by vapor phase epitaxy. Jpn J Appl Phys, 1993, 32: 1528–1533

    Article  Google Scholar 

  25. Wei T, Yang J, Wei Y, et al. Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy. Sci Rep, 2016, 6: 28620

    Article  Google Scholar 

  26. Ryu B, Tawfik W Z, Bae S J, et al. Uni-axial external stress effect on green InGaN/GaN multi-quantum-well light-emitting diodes. J Phys D-Appl Phys, 2013, 46: 435103

    Article  Google Scholar 

  27. Song J S, Rho H, Jeong M S, et al. Spatially resolved photoluminescence and Raman mapping of epitaxial GaN laterally overgrown on sapphire. Phys Rev B, 2010, 81: 233304

    Article  Google Scholar 

  28. Wang Y, Shimma R, Yamamoto T, et al. The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by movpe. J Cryst Growth, 2015, 416: 164–168

    Article  Google Scholar 

  29. Smith J V. Geometrical and Structural Crystallography. New York: Wiley, 1982. 499

    Google Scholar 

  30. Huh C, Lee K S, Kang E J, et al. Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface. J Appl Phys, 2003, 93: 9383–9385

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to ShengRui Xu.

Additional information

This work was supported by the Key Research and Development Program in Shaanxi Province (Grant Nos. 2018ZDCXL-GY-01-02-02 and 2018ZDCXL-GY-01-07), Wuhu and Xidian University Special Fund for Industry University Research Cooperation (Grant No. XWYCXY-012020007), the National Natural Science Foundation of China (Grant No. 62074120), the Fundamental Research Funds for the Central Universities, and the Innovation Fund of Xidian University.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Du, J., Xu, S., Peng, R. et al. Enhancement of optical characteristic of InGaN/GaN multiple quantum-well structures by self-growing air voids. Sci. China Technol. Sci. 64, 1583–1588 (2021). https://doi.org/10.1007/s11431-021-1868-7

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11431-021-1868-7

Keywords

Navigation