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The Influence of Growth Parameters of Strain InGaAs Quantum Wells on Luminescent Properties

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Abstract

InGaAs/GaAs single quantum wells (QWs) were grown on oriented GaAs substrates by metal-organic chemical vapor deposition (MOCVD). Photoluminescence (PL) measurement at room temperature was applied to characterize the optical properties of QWs. The effects of offcut substrates, growth temperature, growth rate and V/III ratio on optical properties were investigated. For 1060-nm InGaAs/GaAs quantum wells, the results show that when the growth temperature is 600°C, the V/III ratio is 43, and the growth rate is 1.15 µm/h, the quality of the quantum well is better. With the decrease of growth temperature, the PL intensity increased significantly. When the temperature is 600°C, the PL intensity is 121% and 52% higher than the other two samples, respectively. FWHM was reduced by 35% and 46% compared with the other two samples, respectively. When the growth rate increased, the PL intensity enhanced 75%, while the FWHM decreased 5%. It can be found that the FWHM decreased greatly and a blueshift occurred with the increase of the growth rate proving that the crystal quality is greatly improved. Increased V/III ratio can improve the growth quality and optical characteristics of InGaAs/GaAs QWs. The wavelength of samples showed a redshift with increased V/III ratio.

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Some or all data, models, or code generated or used during the study are available from the corresponding author by request.

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Authors and Affiliations

  1. College of Electrical Engineering, Jilin Engineering Normal University, Changchun, 130052, Jilin, China

    Lei Gu

  2. Xidian University, Xi’an, China

    Juan Meng

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  1. Lei Gu
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  2. Juan Meng
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Correspondence to Lei Gu.

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Gu, L., Meng, J. The Influence of Growth Parameters of Strain InGaAs Quantum Wells on Luminescent Properties. J. Electron. Mater. 51, 1421–1427 (2022). https://doi.org/10.1007/s11664-021-09394-6

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